Справочник MOSFET. SIHFPC50

 

SIHFPC50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFPC50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 140 nC
   trⓘ - Время нарастания: 37 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO-247AC

 Аналог (замена) для SIHFPC50

 

 

SIHFPC50 Datasheet (PDF)

 ..1. Size:1457K  vishay
 irfpc50 sihfpc50.pdf

SIHFPC50 SIHFPC50

IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia

 ..2. Size:1463K  vishay
 sihfpc50.pdf

SIHFPC50 SIHFPC50

IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia

 ..3. Size:1461K  infineon
 irfpc50 sihfpc50.pdf

SIHFPC50 SIHFPC50

IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia

 0.1. Size:602K  vishay
 sihfpc50lc.pdf

SIHFPC50 SIHFPC50

IRFPC50LC, SiHFPC50LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitive

 0.2. Size:597K  vishay
 irfpc50lc sihfpc50lc.pdf

SIHFPC50 SIHFPC50

IRFPC50LC, SiHFPC50LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitive

 0.3. Size:889K  vishay
 irfpc50a sihfpc50a.pdf

SIHFPC50 SIHFPC50

IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur

 0.4. Size:193K  vishay
 sihfpc50a.pdf

SIHFPC50 SIHFPC50

IRFPC50A, SiHFPC50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.58 Improved Gate, Avalanche and Dynamic dV/dt RoHS*COMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 28 Effec

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