Справочник MOSFET. SIHFPS43N50K

 

SIHFPS43N50K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFPS43N50K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 540 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 140 ns
   Cossⓘ - Выходная емкость: 960 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SUPER-247

 Аналог (замена) для SIHFPS43N50K

 

 

SIHFPS43N50K Datasheet (PDF)

 ..1. Size:171K  vishay
irfps43n50k irfps43n50kpbf sihfps43n50k.pdf

SIHFPS43N50K
SIHFPS43N50K

IRFPS43N50K, SiHFPS43N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 350COMPLIANTRuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current

 ..2. Size:170K  vishay
irfps43n50k sihfps43n50k.pdf

SIHFPS43N50K
SIHFPS43N50K

IRFPS43N50K, SiHFPS43N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 350COMPLIANTRuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current

 7.1. Size:187K  vishay
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf

SIHFPS43N50K
SIHFPS43N50K

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 7.2. Size:178K  vishay
irfps40n60k sihfps40n60k.pdf

SIHFPS43N50K
SIHFPS43N50K

IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current

 7.3. Size:185K  vishay
irfps40n50l sihfps40n50l.pdf

SIHFPS43N50K
SIHFPS43N50K

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 7.4. Size:180K  vishay
irfps40n60k irfps40n60kpbf sihfps40n60k.pdf

SIHFPS43N50K
SIHFPS43N50K

IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current

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History: FDC3612

 

 
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