SIHFR430A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHFR430A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 110 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 24 nC
Время нарастания (tr): 27 ns
Выходная емкость (Cd): 75 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.7 Ohm
Тип корпуса: TO-252
SIHFR430A Datasheet (PDF)
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24COMPLIANTRuggednessQgs (nC) 6.5Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage
irfr430a irfu430a sihfr430a sihfu430a.pdf
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current
irfr420 irfu420 sihfr420 sihfu420.pdf
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IRFR420, IRFU420, SiHFR420, SiHFU420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche RatedQg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420)Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420)Qgd (nC) 13 Available in Tap
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IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac
irfr420a irfu420a sihfr420a sihfu420a.pdf
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IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac
irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf
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IRFR420, IRFU420, SiHFR420, SiHFU420www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420)Qg (Max.) (nC) 19 Available in Tape and ReelQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease
irfr420a irfu420a sihfr420a sihfu420a.pdf
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IRFR420A, IRFU420A, SiHFR420A, SiHFU420Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and DynamicdV/dt RuggednessQg (Max.) (nC) 17 Fully Characterized Capacitance andQgs (nC) 4.3Avalanche Voltage and CurrentQgd (nC) 8.5
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