SIHFZ34 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHFZ34
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 88 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 46 nC
Время нарастания (tr): 100 ns
Выходная емкость (Cd): 600 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm
Тип корпуса: TO-220AB
SIHFZ34 Datasheet (PDF)
irfz34 sihfz34.pdf
IRFZ34, SiHFZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.050RoHS* Fast SwitchingQg (Max.) (nC) 46COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfz34pbf sihfz34.pdf
IRFZ34, SiHFZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.050RoHS* Fast SwitchingQg (Max.) (nC) 46COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfz34l irfz34s sihfz34l sihfz34s.pdf
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.050 Surface MountQg (Max.) (nC) 46 Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) 175 C Operating TemperatureQgs (nC) 11 Fast SwitchingQgd (nC) 22
irfz48l irfz48s sihfz48l sihfz48s.pdf
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Surface Mount (IRFZ48S, SiHFZ48S)Qg (Max.) (nC) 110 Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)Qgs (nC) 29 175 C Operating TemperatureQgd (nC)
irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S
irfz44s irfz44l sihfz44s sihfz44l.pdf
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S
irfz14s irfz14l sihfz14s sihfz14l.pdf
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw
irfz48 irfz48pbf sihfz48.pdf
IRFZ48, SiHFZ48Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.018 RoHS* Ultra Low On-ResistanceCOMPLIANTQg (Max.) (nC) 110 Very Low Thermal ResistanceQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Fast SwitchingConfiguration Single E
irfz14l irfz14s irfz14spbf sihfz14l sihfz14s.pdf
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw
irfz14 sihfz14.pdf
IRFZ14, SiHFZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingQg (Max.) (nC) 11 COMPLIANT Ease of ParallelingQgs (nC) 3.1Qgd (nC) 5.8 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfz40pbf sihfz40.pdf
IRFZ40, SiHFZ40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028 Fast SwitchingQg (Max.) (nC) 67 Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio
irfz10 sihfz10.pdf
IRFZ10, SiHFZ10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 11 Ease of ParallelingQgs (nC) 3.1 Simple Drive RequirementsQgd (nC) 5.8 Compliant to RoHS Directive 2002/95/ECConfiguration Single
irfz48r sihfz48r.pdf
IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH
irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si
irfz20pbf sihfz20.pdf
IRFZ20, SiHFZ20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Extremely Low RDS(on)VDS (V) 50 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.10 Fast SwitchingQg (Max.) (nC) 17 Low Drive CurrentQgs (nC) 9.0 Ease of ParallelingQgd (nC) 3.0 Excellent Temperature StabilityConfiguration Single Parts Per Million Quality Compliant to R
irfz48r irfz48rpbf sihfz48r.pdf
IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH
irfz44r sihfz44r.pdf
IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the
irfz24pbf sihfz24.pdf
IRFZ24, SiHFZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.10 Fast SwitchingQg (Max.) (nC) 25 Ease of ParallelingQgs (nC) 5.8Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio
irfz14s sihfz14s sihfz14l.pdf
IRFZ14S, SiHFZ14S, SiHFZ14Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESD Advanced process technology Surface-mount (IRFZ14S, SiHFZ14S)I2PAK (TO-262)D2PAK (TO-263) Low profile through-hole (SiHFZ14L) Available 175 C operating temperature Fast switchingAvailableG Material categorization: for definitions ofcompliance please see www.vishay.c
irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si
sihfz14.pdf
IRFZ14, SiHFZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingQg (Max.) (nC) 11 COMPLIANT Ease of ParallelingQgs (nC) 3.1Qgd (nC) 5.8 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfz24l irfz24s irfz24spbf sihfz24s.pdf
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.10 Surface Mount (IRFZ24S, SiHFZ24S)Qg (Max.) (nC) 25 Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) 175 C Operating TemperatureQgs (nC) 5.8 Fast Sw
irfz10pbf sihfz10.pdf
IRFZ10, SiHFZ10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 11 Ease of ParallelingQgs (nC) 3.1 Simple Drive RequirementsQgd (nC) 5.8 Compliant to RoHS Directive 2002/95/ECConfiguration Single
irfz44r irfz44rpbf sihfz44r.pdf
IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the
irfz24 sihfz24.pdf
IRFZ24, SiHFZ24www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 175 C operating temperatureRDS(on) ()VGS = 10 V 0.10 Fast switchingQg max. (nC) 25 Ease of parallelingQgs (nC) 5.8Qgd (nC) 11 Simple drive requirementsConfiguration Single Material categorization: for definitions of compliance
irfz40 sihfz40.pdf
IRFZ40, SiHFZ40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028 Fast SwitchingQg (Max.) (nC) 67 Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio
irfz44 sihfz44.pdf
IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfz44pbf sihfz44.pdf
IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
