SIHL520
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SIHL520
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 9.2
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 64
ns
Cossⓘ - Выходная емкость: 150
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27
Ohm
Тип корпуса:
TO-220AB
- подбор MOSFET транзистора по параметрам
SIHL520
Datasheet (PDF)
..1. Size:1082K vishay
irl520 sihl520.pdf 
IRL520, SiHL520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.27RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 3.0 175 C Operating TemperatureQgd (nC) 7.1 Fast SwitchingConfiguration Si
..2. Size:1084K vishay
irl520pbf sihl520.pdf 
IRL520, SiHL520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.27RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 3.0 175 C Operating TemperatureQgd (nC) 7.1 Fast SwitchingConfiguration Si
0.1. Size:327K vishay
irl520l sihl520l.pdf 
IRL520L, SiHL520LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche RatedQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 VConfiguration Single 175C Operatin
0.2. Size:237K vishay
irl520lpbf sihl520l.pdf 
IRL520L, SiHL520LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche RatedQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 VConfiguration Single 175C Operatin
9.1. Size:272K vishay
irl510s sihl510s.pdf 
IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4
9.2. Size:296K vishay
irl540spbf sihl540s.pdf 
IRL540S, SiHL540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS(on) Specified at VGS = 4 V
9.3. Size:1065K vishay
irl540 sihl540.pdf 
IRL540, SiHL540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.077RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.4 175 C Operating TemperatureQgd (nC) 27 Fast SwitchingConfiguration Si
9.4. Size:1019K vishay
sihl530.pdf 
IRL530, SiHL530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.16RoHS* Logic-Level Gate DriveQg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 14 Fast SwitchingConfiguration Singl
9.5. Size:996K vishay
irl530 sihl530.pdf 
IRL530, SiHL530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.16RoHS* Logic-Level Gate DriveQg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 14 Fast SwitchingConfiguration Singl
9.6. Size:1077K vishay
irl510pbf sihl510.pdf 
IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si
9.7. Size:297K vishay
irl510spbf sihl510s.pdf 
IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4
9.8. Size:301K vishay
irl530s sihl530s.pdf 
IRL530S, SiHL530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5.0 V 0.16 Available in Tape and ReelQg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.8 Logic Level Gate DriveQgd (nC) 14 RDS(on) Specified at VGS = 4 V
9.9. Size:1074K vishay
irl510 sihl510.pdf 
IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si
9.10. Size:275K vishay
irl530s sihl530s.pdf 
IRL530S, SiHL530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5.0 V 0.16 Available in Tape and ReelQg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.8 Logic Level Gate DriveQgd (nC) 14 RDS(on) Specified at VGS = 4 V
9.11. Size:1068K vishay
irl540pbf sihl540.pdf 
IRL540, SiHL540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.077RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.4 175 C Operating TemperatureQgd (nC) 27 Fast SwitchingConfiguration Si
9.12. Size:270K vishay
irl540s sihl540s.pdf 
IRL540S, SiHL540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS(on) Specified at VGS = 4 V
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History: WSF38P10
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