SIHL530S. Аналоги и основные параметры
Наименование производителя: SIHL530S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 250 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: TO-263
Аналог (замена) для SIHL530S
- подборⓘ MOSFET транзистора по параметрам
SIHL530S даташит
..1. Size:301K vishay
irl530s sihl530s.pdf 

IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5.0 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.8 Logic Level Gate Drive Qgd (nC) 14 RDS(on) Specified at VGS = 4 V
..2. Size:275K vishay
irl530s sihl530s.pdf 

IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5.0 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.8 Logic Level Gate Drive Qgd (nC) 14 RDS(on) Specified at VGS = 4 V
7.1. Size:1019K vishay
sihl530.pdf 

IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.16 RoHS* Logic-Level Gate Drive Qg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 14 Fast Switching Configuration Singl
7.2. Size:996K vishay
irl530 sihl530.pdf 

IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.16 RoHS* Logic-Level Gate Drive Qg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 14 Fast Switching Configuration Singl
9.1. Size:272K vishay
irl510s sihl510s.pdf 

IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4
9.2. Size:296K vishay
irl540spbf sihl540s.pdf 

IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS(on) Specified at VGS = 4 V
9.3. Size:1065K vishay
irl540 sihl540.pdf 

IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.077 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.4 175 C Operating Temperature Qgd (nC) 27 Fast Switching Configuration Si
9.4. Size:327K vishay
irl520l sihl520l.pdf 

IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operatin
9.5. Size:1082K vishay
irl520 sihl520.pdf 

IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.0 175 C Operating Temperature Qgd (nC) 7.1 Fast Switching Configuration Si
9.6. Size:1084K vishay
irl520pbf sihl520.pdf 

IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.0 175 C Operating Temperature Qgd (nC) 7.1 Fast Switching Configuration Si
9.7. Size:1077K vishay
irl510pbf sihl510.pdf 

IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si
9.8. Size:237K vishay
irl520lpbf sihl520l.pdf 

IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operatin
9.9. Size:297K vishay
irl510spbf sihl510s.pdf 

IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4
9.10. Size:1074K vishay
irl510 sihl510.pdf 

IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si
9.11. Size:1068K vishay
irl540pbf sihl540.pdf 

IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.077 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.4 175 C Operating Temperature Qgd (nC) 27 Fast Switching Configuration Si
9.12. Size:270K vishay
irl540s sihl540s.pdf 

IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS(on) Specified at VGS = 4 V
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