IRLI510A. Аналоги и основные параметры
Наименование производителя: IRLI510A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 50 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.44 Ohm
Тип корпуса: TO262
Аналог (замена) для IRLI510A
- подборⓘ MOSFET транзистора по параметрам
IRLI510A даташит
..1. Size:260K fairchild semi
irlw510a irli510a.pdf 
IRLW/I510A FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 1 2 3 3 1. Gate 2. Drai
9.4. Size:157K international rectifier
irli540g.pdf 
Document Number 90399 www.vishay.com 1391 Document Number 90399 www.vishay.com 1392 Document Number 90399 www.vishay.com 1393 Document Number 90399 www.vishay.com 1394 Document Number 90399 www.vishay.com 1395 Document Number 90399 www.vishay.com 1396 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as
9.5. Size:258K international rectifier
irli540npbf.pdf 
PD -95454 IRLI540NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.044 l Fully Avalanche Rated G l Lead-Free ID = 23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique
9.6. Size:1059K international rectifier
irli520npbf.pdf 
PD - 95049 IRLI520NPbF Lead-Free www.irf.com 1 2/25/04 IRLI520NPbF 2 www.irf.com IRLI520NPbF www.irf.com 3 IRLI520NPbF 4 www.irf.com IRLI520NPbF www.irf.com 5 IRLI520NPbF 6 www.irf.com IRLI520NPbF www.irf.com 7 IRLI520NPbF 8 www.irf.com IRLI520NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Informat
9.7. Size:933K international rectifier
irli530g.pdf 
PD - 95030 IRLI530GPbF Lead-Free 2/19/04 Document Number 91311 www.vishay.com 1 IRLI530GPbF Document Number 91311 www.vishay.com 2 IRLI530GPbF Document Number 91311 www.vishay.com 3 IRLI530GPbF Document Number 91311 www.vishay.com 4 IRLI530GPbF Document Number 91311 www.vishay.com 5 IRLI530GPbF Document Number 91311 www.vishay.com 6 IRLI530GPbF TO-220 Full-
9.8. Size:158K international rectifier
irli520g.pdf 
Document Number 90397 www.vishay.com 1379 Document Number 90397 www.vishay.com 1380 Document Number 90397 www.vishay.com 1381 Document Number 90397 www.vishay.com 1382 Document Number 90397 www.vishay.com 1383 Document Number 90397 www.vishay.com 1384 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as
9.9. Size:146K international rectifier
irli520n.pdf 
PD - 9.1496A IRLI520N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.18 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID =8.1A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi
9.10. Size:122K international rectifier
irli540n.pdf 
PD - 9.1497A IRLI540N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 23A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ac
9.11. Size:144K international rectifier
irli530n.pdf 
PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.10 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach
9.12. Size:968K vishay
irli520g irli520gpbf sihli520g.pdf 
IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 5 V 0.27 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 Logic-Level Gate Drive Qgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.
9.13. Size:1533K vishay
irli530g sihli530g.pdf 
IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 Logic-Level Gate Drive Qgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14
9.14. Size:1535K vishay
irli530g irli530gpbf sihli530g.pdf 
IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 Logic-Level Gate Drive Qgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14
9.15. Size:967K vishay
irli520g sihli520g.pdf 
IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 5 V 0.27 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 Logic-Level Gate Drive Qgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.
9.16. Size:1502K vishay
irli540g irli540gpbf sihli540g.pdf 
IRLI540G, SiHLI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5 V 0.077 f = 60 Hz) Qg (Max.) (nC) 64 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS (on) Specified at VGS = 4 V and 5 V Fast Switching Configur
9.17. Size:498K infineon
irli530npbf.pdf 
IRLI530NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.10 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 12A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
9.18. Size:611K infineon
irli520npbf.pdf 
IRLI520NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.18 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 8.1A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te
9.19. Size:2848K cn vbsemi
irli530npbf.pdf 
IRLI530NPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.086 f = 60 Hz) RoHS Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low Thermal R
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