IRLI510A - параметры транзистора MOSFET, его аналоги, datasheet

IRLI510A Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRLI510A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.44 Ohm
   Тип корпуса: TO262

Аналог (замена) для IRLI510A

- подбор MOSFET транзистора по параметрам

IRLI510A Datasheet (PDF)

..1. Size:260K fairchild semi
irlw510a irli510a.pdf pdf_icon

IRLW/I510AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.)112331. Gate 2. Drai

9.1. Size:166K 1
irli530a irlw530a.pdf pdf_icon

9.2. Size:344K 1
irli540a irlw540a.pdf pdf_icon

9.3. Size:165K 1
irli520a irlw520a.pdf pdf_icon

9.4. Size:157K international rectifier
irli540g.pdf pdf_icon

Document Number: 90399 www.vishay.com1391Document Number: 90399 www.vishay.com1392Document Number: 90399 www.vishay.com1393Document Number: 90399 www.vishay.com1394Document Number: 90399 www.vishay.com1395Document Number: 90399 www.vishay.com1396Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

9.5. Size:258K international rectifier
irli540npbf.pdf pdf_icon

PD -95454IRLI540NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated Package VDSS = 100Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.044l Fully Avalanche Rated Gl Lead-FreeID = 23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing technique

9.6. Size:1059K international rectifier
irli520npbf.pdf pdf_icon

PD - 95049IRLI520NPbF Lead-Freewww.irf.com 12/25/04IRLI520NPbF2 www.irf.comIRLI520NPbFwww.irf.com 3IRLI520NPbF4 www.irf.comIRLI520NPbFwww.irf.com 5IRLI520NPbF6 www.irf.comIRLI520NPbFwww.irf.com 7IRLI520NPbF8 www.irf.comIRLI520NPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking Informat

9.7. Size:933K international rectifier
irli530g.pdf pdf_icon

PD - 95030IRLI530GPbF Lead-Free2/19/04Document Number: 91311 www.vishay.com1IRLI530GPbFDocument Number: 91311 www.vishay.com2IRLI530GPbFDocument Number: 91311 www.vishay.com3IRLI530GPbFDocument Number: 91311 www.vishay.com4IRLI530GPbFDocument Number: 91311 www.vishay.com5IRLI530GPbFDocument Number: 91311 www.vishay.com6IRLI530GPbFTO-220 Full-

9.8. Size:158K international rectifier
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Document Number: 90397 www.vishay.com1379Document Number: 90397 www.vishay.com1380Document Number: 90397 www.vishay.com1381Document Number: 90397 www.vishay.com1382Document Number: 90397 www.vishay.com1383Document Number: 90397 www.vishay.com1384Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

9.9. Size:146K international rectifier
irli520n.pdf pdf_icon

PD - 9.1496AIRLI520NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.18 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID =8.1ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

9.10. Size:122K international rectifier
irli540n.pdf pdf_icon

PD - 9.1497AIRLI540NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 23ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ac

9.11. Size:144K international rectifier
irli530n.pdf pdf_icon

PD - 9.1350BIRLI530NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.10 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ach

9.12. Size:968K vishay
irli520g irli520gpbf sihli520g.pdf pdf_icon

IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.

9.13. Size:1533K vishay
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IRLI530G, SiHLI530GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.16f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 28 Logic-Level Gate DriveQgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 14

9.14. Size:1535K vishay
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9.15. Size:967K vishay
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9.16. Size:1502K vishay
irli540g irli540gpbf sihli540g.pdf pdf_icon

IRLI540G, SiHLI540GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5 V 0.077f = 60 Hz)Qg (Max.) (nC) 64 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS (on) Specified at VGS = 4 V and 5 V Fast SwitchingConfigur

9.17. Size:498K infineon
irli530npbf.pdf pdf_icon

IRLI530NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.10 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 12A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

9.18. Size:611K infineon
irli520npbf.pdf pdf_icon

IRLI520NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.18 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 8.1A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

9.19. Size:2848K cn vbsemi
irli530npbf.pdf pdf_icon

IRLI530NPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.086 f = 60 Hz)RoHS Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low Thermal R

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