SIHLZ14L
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SIHLZ14L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 43
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 10
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 8.4
nC
trⓘ -
Время нарастания: 110
ns
Cossⓘ - Выходная емкость: 170
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2
Ohm
Тип корпуса:
TO-262
- подбор MOSFET транзистора по параметрам
SIHLZ14L
Datasheet (PDF)
..1. Size:337K vishay
irlz14spbf sihlz14l sihlz14s.pdf 
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
..2. Size:312K vishay
irlz14s irlz14l sihlz14s sihlz14l.pdf 
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
7.1. Size:1084K vishay
irlz14 sihlz14.pdf 
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
7.2. Size:1086K vishay
irlz14pbf sihlz14.pdf 
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
9.1. Size:436K vishay
irlz44s irlz44spbf sihlz44s.pdf 
IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating
9.2. Size:367K vishay
irlz34l irlz34s sihlz34l sihlz34s.pdf 
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.05 Surface Mount (IRLZ34S, SiHLZ34S)Qg (Max.) (nC) 35 Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)Qgs (nC) 7.1 175 C Operating Temperature Fast Sw
9.3. Size:1736K vishay
irlz44 sihlz44.pdf 
IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si
9.4. Size:1738K vishay
irlz44pbf sihlz44.pdf 
IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si
9.5. Size:1747K vishay
irlz24pbf irlz24 sihlz24.pdf 
IRLZ24, SiHLZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.10RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 18 175 C Operating TemperatureQgs (nC) 4.5 Fast SwitchingQgd (nC) 12 Ease of ParallelingConfiguration Single
9.6. Size:1744K vishay
irlz24 sihlz24.pdf 
IRLZ24, SiHLZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.10RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 18 175 C Operating TemperatureQgs (nC) 4.5 Fast SwitchingQgd (nC) 12 Ease of ParallelingConfiguration Single
9.7. Size:1531K vishay
irlz34 sihlz34.pdf 
IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single
9.8. Size:308K vishay
irlz24s irlz24l sihlz24s sihlz24l.pdf 
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12
9.9. Size:334K vishay
irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf 
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12
9.10. Size:411K vishay
irlz44s sihlz44s.pdf 
IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating
9.11. Size:1533K vishay
irlz34pbf sihlz34.pdf 
IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single
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History: 2SK2388
