SIHLZ14L. Аналоги и основные параметры
Наименование производителя: SIHLZ14L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 43 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 110 ns
Cossⓘ - Выходная емкость: 170 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: TO-262
Аналог (замена) для SIHLZ14L
- подборⓘ MOSFET транзистора по параметрам
SIHLZ14L даташит
..1. Size:337K vishay
irlz14spbf sihlz14l sihlz14s.pdf 

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
..2. Size:312K vishay
irlz14s irlz14l sihlz14s sihlz14l.pdf 

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
7.1. Size:1084K vishay
irlz14 sihlz14.pdf 

IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D
7.2. Size:1086K vishay
irlz14pbf sihlz14.pdf 

IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D
9.1. Size:436K vishay
irlz44s irlz44spbf sihlz44s.pdf 

IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating
9.2. Size:367K vishay
irlz34l irlz34s sihlz34l sihlz34s.pdf 

IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.05 Surface Mount (IRLZ34S, SiHLZ34S) Qg (Max.) (nC) 35 Low-Profile Through-Hole (IRLZ34L, SiHLZ34L) Qgs (nC) 7.1 175 C Operating Temperature Fast Sw
9.3. Size:1736K vishay
irlz44 sihlz44.pdf 

IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si
9.4. Size:1738K vishay
irlz44pbf sihlz44.pdf 

IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si
9.5. Size:1747K vishay
irlz24pbf irlz24 sihlz24.pdf 

IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single
9.6. Size:1744K vishay
irlz24 sihlz24.pdf 

IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single
9.7. Size:1531K vishay
irlz34 sihlz34.pdf 

IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.050 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 175 C Operating Temperature Qgs (nC) 7.1 Fast Switching Qgd (nC) 25 Ease of Paralleling Configuration Single
9.8. Size:308K vishay
irlz24s irlz24l sihlz24s sihlz24l.pdf 

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12
9.9. Size:334K vishay
irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf 

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12
9.10. Size:411K vishay
irlz44s sihlz44s.pdf 

IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating
9.11. Size:1533K vishay
irlz34pbf sihlz34.pdf 

IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.050 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 175 C Operating Temperature Qgs (nC) 7.1 Fast Switching Qgd (nC) 25 Ease of Paralleling Configuration Single
Другие IGBT... SIHLL110, SIHLR014, SIHLR024, SIHLR110, SIHLU014, SIHLU024, SIHLU110, SIHLZ14, IRFB4227, SIHLZ14S, SIHLZ24, SIHLZ24L, SIHLZ24S, SIHLZ34, SIHLZ34L, SIHLZ34S, SIHLZ44