Справочник MOSFET. IRLI530A

 

IRLI530A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLI530A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 62 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IRLI530A

 

 

IRLI530A Datasheet (PDF)

 ..1. Size:166K  1
 irli530a irlw530a.pdf

IRLI530A IRLI530A

 7.1. Size:933K  international rectifier
 irli530g.pdf

IRLI530A IRLI530A

PD - 95030IRLI530GPbF Lead-Free2/19/04Document Number: 91311 www.vishay.com1IRLI530GPbFDocument Number: 91311 www.vishay.com2IRLI530GPbFDocument Number: 91311 www.vishay.com3IRLI530GPbFDocument Number: 91311 www.vishay.com4IRLI530GPbFDocument Number: 91311 www.vishay.com5IRLI530GPbFDocument Number: 91311 www.vishay.com6IRLI530GPbFTO-220 Full-

 7.2. Size:144K  international rectifier
 irli530n.pdf

IRLI530A IRLI530A

PD - 9.1350BIRLI530NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.10 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ach

 7.3. Size:1533K  vishay
 irli530g sihli530g.pdf

IRLI530A IRLI530A

IRLI530G, SiHLI530GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.16f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 28 Logic-Level Gate DriveQgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 14

 7.4. Size:1535K  vishay
 irli530g irli530gpbf sihli530g.pdf

IRLI530A IRLI530A

IRLI530G, SiHLI530GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.16f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 28 Logic-Level Gate DriveQgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 14

 7.5. Size:498K  infineon
 irli530npbf.pdf

IRLI530A IRLI530A

IRLI530NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.10 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 12A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 7.6. Size:2848K  cn vbsemi
 irli530npbf.pdf

IRLI530A IRLI530A

IRLI530NPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.086 f = 60 Hz)RoHS Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low Thermal R

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