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SIHP23N60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SIHP23N60E

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 227 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 23 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 63 nC

Время нарастания (tr): 38 ns

Выходная емкость (Cd): 119 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.158 Ohm

Тип корпуса: TO-220AB

Аналог (замена) для SIHP23N60E

 

SIHP23N60E Datasheet (PDF)

1.1. sihp23n60e.pdf Size:167K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.158 • Reduced switching and conduction losses Qg max. (nC) 95 • Ultra low gate charge (Qg) Qgs (nC) 16 Qgd (nC) 25 • Avalanche energy rated (UIS) Con

5.1. sihp22n60s.pdf Size:210K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY • Generation One VDS at TJ max. (V) 650 • High EAR Capability RDS(on) max. at 25 °C () VGS = 10 V 0.190 • Lower Figure-of-Merit Ron x Qg Qg max. (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron Configuration Single • dV/dt Ruggedness • Ultra Low G

5.2. sihp20n50e.pdf Size:158K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.184 • Reduced switching and conduction losses Qg max. (nC) 92 • Low gate charge (Qg) Qgs (nC) 10 • Avalanche energy rated (UIS) Qgd (nC) 19 • Mater

 5.3. sihp28n65e.pdf Size:165K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.122 • Reduced switching and conduction losses Qg max. (nC) 140 • Ultra low gate charge (Qg) Qgs (nC) 21 • Avalanche energy rated (UIS) Qgd (nC) 37

5.4. sihp22n60e.pdf Size:207K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.18 • Reduced Switching and Conduction Losses Qg max. (nC) 86 • Ultra Low Gate Charge (Qg) Qgs (nC) 14 • Avalanche Energy Rated (UIS) Qgd (nC) 26 •

 5.5. sihp24n65e.pdf Size:209K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.145 • Reduced Switching and Conduction Losses Qg max. (nC) 122 • Ultra Low Gate Charge (Qg) Qgs (nC) 21 • Avalanche Energy Rated (UIS) Qgd (nC) 37

5.6. sihp25n50e.pdf Size:158K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM): Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.145 • Reduced switching and conduction losses Qg (Max.) (nC) 86 • Low gate charge (Qg) Qgs (nC) 14 Qgd (nC) 25 • Avalanche energy rated (UIS) Config

5.7. sihp22n65e.pdf Size:167K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Available Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Availab

5.8. sihp28n60ef.pdf Size:158K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY • Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology • Reduced trr, Qrr, and IRRM RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.123 • Low figure-of-merit (FOM): Ron x Qg Qg (Max.) (nC) 120 • Low input capacitance (Ciss) Qgs (nC) 17 • Low switc

5.9. sihp25n40d.pdf Size:208K _upd-mosfet

SIHP23N60E
SIHP23N60E

SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.17 - Low Input Capacitance (Ciss) Qg max. (nC) 88 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 23

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