Справочник MOSFET. FMI16N60ES

 

FMI16N60ES Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FMI16N60ES
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 270 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 230 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm
   Тип корпуса: T-PACK-L
 

 Аналог (замена) для FMI16N60ES

   - подбор ⓘ MOSFET транзистора по параметрам

 

FMI16N60ES Datasheet (PDF)

 ..1. Size:523K  fuji
fmi16n60es.pdfpdf_icon

FMI16N60ES

FMI16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

 5.1. Size:474K  fuji
fmi16n60e.pdfpdf_icon

FMI16N60ES

FMI16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 8.1. Size:482K  fuji
fmi16n50es.pdfpdf_icon

FMI16N60ES

FMI16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.

 8.2. Size:364K  fuji
fmi16n50e.pdfpdf_icon

FMI16N60ES

FMI16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Другие MOSFET... FMI12N50E , FMI12N50ES , FMI12N60ES , FMI13N60E , FMI13N60ES , FMI16N50E , FMI16N50ES , FMI16N60E , K3569 , FMI20N50E , FMI20N50ES , FMI80N10T2 , FML12N50ES , FML12N60ES , FML13N60ES , FML16N50ES , FML16N60ES .

History: 2N5454

 

 
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