IRLI640G - описание и поиск аналогов

PD - 9.1237 IRLI640G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.18 RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 9.9A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast

PD- 95654 IRLI640GPbF Lead-Free 7/26/04 Document Number 91314 www.vishay.com 1 IRLI640GPbF Document Number 91314 www.vishay.com 2 IRLI640GPbF Document Number 91314 www.vishay.com 3 IRLI640GPbF Document Number 91314 www.vishay.com 4 IRLI640GPbF Document Number 91314 www.vishay.com 5 IRLI640GPbF Document Number 91314 www.vishay.com 6 IRLI640GPbF Peak Diode Re

PD- 95753 IRLI620GPbF Lead-Free www.irf.com 1 8/23/04 IRLI620GPbF 2 www.irf.com IRLI620GPbF www.irf.com 3 IRLI620GPbF 4 www.irf.com IRLI620GPbF www.irf.com 5 IRLI620GPbF 6 www.irf.com IRLI620GPbF www.irf.com 7 IRLI620GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information EXAMPLE THIS IS AN IRFI8

PD - 9.1235 IRLI620G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.80 RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 4.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast

PD- 95653 IRLI630GPbF Lead-Free www.irf.com 1 7/26/04 IRLI630GPbF 2 www.irf.com IRLI630GPbF www.irf.com 3 IRLI630GPbF 4 www.irf.com IRLI630GPbF www.irf.com 5 IRLI630GPbF 6 www.irf.com IRLI630GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +

PD - 9.1236 IRLI630G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.40 RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast

IRLW/I610A FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 150 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 1.185 (Typ.) 1 1 2 3 3 1. Gate 2. Drain

IRLW/I630A FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 150 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3