IRF840ASPBF - описание и поиск аналогов

PD- 95143 IRF840ASPbF SMPS MOSFET IRF840ALPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85 8.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.0 Ruggedness Qgd (nC) 18 Fully Characterized Capa

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.0 Ruggedness Qgd (nC) 18 Fully Characterized Capa

PD- 94829 SMPS MOSFET IRF840APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.85 8.0A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and S D A

PD- 94829 SMPS MOSFET IRF840APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.85 8.0A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and S D A

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configura

isc N-Channel Mosfet Transistor IRF840A FEATURES Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM