IRF8721GPBF - аналоги, параметры транзистора - Справочник транзисторов

IRF8721GPBF даташит

..1. Size:252K international rectifier
irf8721gpbf.pdf pdf_icon

PD - 96262 IRF8721GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 8.5m @VGS = 10V 30V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems A Benefits A 1 8 S D l Very Low Gate Charge 2 7 S D l Low RDS(on) at 4.5V VGS 3 6 l Low Gate Impedance S D 4 5 l Fully Chara

7.1. Size:207K international rectifier
irf8721pbf-1.pdf pdf_icon

IRF8721PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 8.5 m 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 8.3 nC S D ID 4 5 G D 14 A (@T = 25 C) A SO-8 Top View Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinou

7.2. Size:229K international rectifier
irf8721pbf.pdf pdf_icon

PD - 97119 IRF8721PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor 8.5m 30V @VGS = 10V 8.3nC Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems A A Benefits 1 8 S D l Very Low Gate Charge 2 7 S D l Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Impedance 4 5 G D l Ful

7.3. Size:1491K cn vbsemi
irf8721tr.pdf pdf_icon

IRF8721TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

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