IRF8788PBF-1 datasheet, аналоги, основные параметры
Наименование производителя: IRF8788PBF-1 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 980 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: SO-8
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Аналог (замена) для IRF8788PBF-1
- подборⓘ MOSFET транзистора по параметрам
IRF8788PBF-1 даташит
..1. Size:219K international rectifier
irf8788pbf-1.pdf 
IRF8788PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 2.8 2 7 S D (@V = 10V) GS m RDS(on) max 3 6 S D 3.8 (@V = 4.5V) GS 4 5 G D Qg (typical) 44 nC SO-8 ID Top View 24 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS
4.1. Size:227K international rectifier
irf8788pbf.pdf 
PD - 97137A IRF8788PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power 30V 2.8m l Synchronous Rectifier MOSFET for @VGS = 10V 44nC Isolated DC-DC Converters Benefits A A l Very Low Gate Charge 1 8 S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Fully Characterized Avalanche Voltage 4
9.1. Size:497K international rectifier
auirf8736m2tr.pdf 
AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
9.2. Size:250K international rectifier
irf8714pbf.pdf 
PD - 96116 IRF8714PbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 8.7m @VGS = 10V 30V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits A A 1 8 l Very Low Gate Charge S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Fully
9.3. Size:246K international rectifier
irf8707gpbf.pdf 
PD - 96264 IRF8707GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 11.9m @VGS = 10V 30V 6.2nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems A Benefits A 1 8 S D l Very Low Gate Charge 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 l Ultra-Low Gate Impedance S D
9.4. Size:224K international rectifier
irf8736pbf-1.pdf 
IRF8736PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 4.8 m 2 7 (@V = 10V) GS S D Qg (typical) 17 nC 3 6 S D ID 4 5 18 A G D (@T = 25 C) A SO-8 Top View Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout SO-8 Pack
9.5. Size:207K international rectifier
irf8721pbf-1.pdf 
IRF8721PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 8.5 m 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 8.3 nC S D ID 4 5 G D 14 A (@T = 25 C) A SO-8 Top View Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinou
9.6. Size:702K international rectifier
auirf8739l2tr.pdf 
AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 545A Low Parasitic Parameters Qg 375n
9.7. Size:218K international rectifier
irf8707pbf-1.pdf 
IRF8707PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 11.9 2 7 (@V = 10V) S D GS m RDS(on) max 3 6 S D 17.5 (@V = 4.5V) GS 4 5 G D Qg (typical) 6.2 nC SO-8 ID Top View 11.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing R
9.8. Size:272K international rectifier
irf8734pbf.pdf 
PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 3.5m @VGS = 10V 30V 20nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Volt
9.9. Size:229K international rectifier
irf8721pbf.pdf 
PD - 97119 IRF8721PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor 8.5m 30V @VGS = 10V 8.3nC Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems A A Benefits 1 8 S D l Very Low Gate Charge 2 7 S D l Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Impedance 4 5 G D l Ful
9.10. Size:702K international rectifier
auirf8739l2.pdf 
AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 545A Low Parasitic Parameters Qg 375n
9.11. Size:497K international rectifier
auirf8736m2.pdf 
AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
9.12. Size:248K international rectifier
irf8707pbf.pdf 
PD - 96118A IRF8707PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 11.9m @VGS = 10V 30V 6.2nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 Benefits S D l Very Low Gate Charge 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4
9.13. Size:220K international rectifier
irf8714pbf-1.pdf 
IRF8714PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 8.7 m 2 7 (@V = 10V) S D GS Qg (typical) 8.1 nC 3 6 S D ID 4 5 14 A G D (@T = 25 C) A SO-8 Top View Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout
9.14. Size:249K international rectifier
irf8714gpbf.pdf 
PD - 96263 IRF8714GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 8.7m @VGS = 10V 30V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits A A l Very Low Gate Charge 1 8 S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Full
9.15. Size:247K international rectifier
irf8736pbf.pdf 
PD - 97120 IRF8736PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 4.8m @VGS = 10V 30V 17nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 Benefits S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage
9.16. Size:252K international rectifier
irf8721gpbf.pdf 
PD - 96262 IRF8721GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 8.5m @VGS = 10V 30V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems A Benefits A 1 8 S D l Very Low Gate Charge 2 7 S D l Low RDS(on) at 4.5V VGS 3 6 l Low Gate Impedance S D 4 5 l Fully Chara
9.17. Size:810K cn vbsemi
irf8736tr.pdf 
IRF8736TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch
9.18. Size:1491K cn vbsemi
irf8721tr.pdf 
IRF8721TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch
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