IRF8910PBF-1 - параметры транзистора MOSFET, его аналоги, datasheet

IRF8910PBF-1 Datasheet (PDF)

..1. Size:250K international rectifier
irf8910pbf-1.pdf pdf_icon

IRF8910PbF-1HEXFET Power MOSFETVDS 20 V1 8S1 D1RDS(on) max 2 713.4G1 D1(@V = 10V)GSm3 6S2 D2RDS(on) max 18.34 5(@V = 4.5V)GSG2 D2Qg (typical) 7.4 nCSO-8Top ViewID 10 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturin

7.1. Size:284K international rectifier
irf8910gpbf.pdf pdf_icon

PD -96257IRF8910GPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Dual SO-8 MOSFET for POLconverters in desktop, servers,13.4m @VGS = 10V20V 10Agraphics cards, game consolesand set-top boxl Lead-Free1l Halogen-Free 8S1 D12 7G1 D1Benefits3 6S2 D2l Very Low RDS(on) at 4.5V VGS45G2 D2l Ultra-Low Gate ImpedanceSO-8l Fully Characterized Ava

8.1. Size:285K 1
irf8915.pdf pdf_icon

PD -95727AIRF8915PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDDual SO-8 MOSFET for POLconverters in desktop, servers,18.3m @VGS = 10V20V 8.9Agraphics cards, game consolesand set-top boxl Lead-Free1 8S1 D12 7G1 D13 6S2 D2Benefits4 5G2 D2l Ultra-Low Gate ImpedanceSO-8l Very Low RDS(on)Top Viewl Fully Characterized Avalanche Voltageand

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