IRF9383MPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9383MPBF
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 130 nC
trⓘ - Время нарастания: 160 ns
Cossⓘ - Выходная емкость: 1780 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0029 Ohm
Тип корпуса: DIRECTFET
Аналог (замена) для IRF9383MPBF
IRF9383MPBF Datasheet (PDF)
irf9383mpbf.pdf
IRF9383MPbFDirectFET P-Channel Power MOSFET Typical values (unless otherwise specified)Applicationsl Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications-30V max 20V max 2.3m@-10V 3.8m@-4.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits67nC 29nC 9.4nC 315nC 59nC -1.8Vl Environmental
irf9383mpbf.pdf
IRF9383MPbFDirectFET P-Channel Power MOSFET Typical values (unless otherwise specified)Applicationsl Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications-30V max 20V max 2.3m@-10V 3.8m@-4.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits67nC 29nC 9.4nC 315nC 59nC -1.8Vl Environmentaly
irf9388pbf.pdf
PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant
irf9389.pdf
IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i
irf9388pbf.pdf
PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant
irf9389pbf.pdf
IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i
irf9389tr.pdf
IRF9389TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
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