Справочник MOSFET. SSM20P02GJ

 

SSM20P02GJ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSM20P02GJ
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 31.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 410 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для SSM20P02GJ

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSM20P02GJ Datasheet (PDF)

 ..1. Size:319K  silicon standard
ssm20p02gh ssm20p02gj.pdfpdf_icon

SSM20P02GJ

SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi

 9.1. Size:717K  silicon standard
ssm20g45egh.pdfpdf_icon

SSM20P02GJ

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

 9.2. Size:321K  silicon standard
ssm20n03s.pdfpdf_icon

SSM20P02GJ

SSM20N03S,PN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETDynamic dv/dt rating BVDSS 30VDRepetitive-avalanche rated RDS(ON) 52m Fast switching ID 20AGSimple drive requirementSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,S TO-263ruggedized device design, low on-resistance and cost-effectiveness.The TO-

 9.3. Size:555K  silicon standard
ssm2030gm.pdfpdf_icon

SSM20P02GJ

SSM2030GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 20VSimple drive requirement D2D2D2 RDS(ON) 30mLower gate charge D1D1D1D1ID 6AFast switching characteristicsG2G2P-CH BVDSS -20VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 50mS1 DESCRIPTIONID -5AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer wit

Другие MOSFET... SSM09N70GP-A , SSM09N90CGW , SSM09N90GW , SSM1333GU , SSM2030GM , SSM2030SD , SSM20N03S , SSM20P02GH , IRF1407 , SSM2301GN , SSM2302GN , SSM2303GN , SSM2304AGN , SSM2304GN , SSM2305AGN , SSM2305GN , SSM2306GN .

History: 2SK2916 | MCP87022 | IRF241 | BLM06N03-D | BLP02N06-D | ZVN4525G

 

 
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