IRLM210A - описание и поиск аналогов

IRLM210A Advanced Power MOSFET FEATURES BVDSS = 200 V n Avalanche Rugged Technology RDS(on) = 1.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 0.77 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current 10 A(Max.) @ VDS = 200V 2 n Lower RDS(ON) 1.185 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

IRLM220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.13 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A(Max.) @ VDS = 200V 2 Lower RDS(ON) 0.609 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum R

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

IRLM2502TR www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Con