Справочник MOSFET. SSM2318GEN

 

SSM2318GEN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSM2318GEN
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 44 ns
   Cossⓘ - Выходная емкость: 12 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.72 Ohm
   Тип корпуса: SOT-23-3
 

 Аналог (замена) для SSM2318GEN

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSM2318GEN Datasheet (PDF)

 ..1. Size:497K  silicon standard
ssm2318gen.pdfpdf_icon

SSM2318GEN

SSM2318GENN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2318GEN acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 720mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 1AD The SSM2318GEN is supplied in an RoHS-compliantPb-free; RoHS

 8.1. Size:310K  silicon standard
ssm2312gn.pdfpdf_icon

SSM2318GEN

SSM2312GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 50mDS(ON)Fast switching ID 4.3AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2312GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC

 8.2. Size:313K  silicon standard
ssm2313gn.pdfpdf_icon

SSM2318GEN

SSM2313GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -20VDSimple drive requirement R 120mDS(ON)Fast switching ID -2.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2313GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as

 8.3. Size:498K  silicon standard
ssm2316gn.pdfpdf_icon

SSM2318GEN

SSM2316GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2316GN acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 42mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 4.7AD The SSM2316GN is supplied in an RoHS-compliantPb-free; RoHS-c

Другие MOSFET... SSM2306GN , SSM2307GN , SSM2309GN , SSM2310GN , SSM2312GN , SSM2313GN , SSM2314GN , SSM2316GN , IRFB31N20D , SSM25T03GH , SSM25T03GJ , SSM2602GY , SSM2602Y , SSM2603GY , SSM2603Y , SSM2605GY , SSM2761P-A .

History: SSM5N16FE | AOI600A60 | FDMA86108LZ | NCE60N1K0R | IPB60R160C6 | 5N65G-TN3-R

 

 
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