SSM2318GEN datasheet, аналоги, основные параметры

Наименование производителя: SSM2318GEN  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.38 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 44 ns

Cossⓘ - Выходная емкость: 12 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.72 Ohm

Тип корпуса: SOT-23-3

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Аналог (замена) для SSM2318GEN

- подборⓘ MOSFET транзистора по параметрам

 

SSM2318GEN даташит

 ..1. Size:497K  silicon standard
 ssm2318gen.pdf pdf_icon

SSM2318GEN

SSM2318GEN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2318GEN acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 720m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 1A D The SSM2318GEN is supplied in an RoHS-compliant Pb-free; RoHS

 8.1. Size:310K  silicon standard
 ssm2312gn.pdf pdf_icon

SSM2318GEN

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 20V D Simple drive requirement R 50m DS(ON) Fast switching ID 4.3A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as DC

 8.2. Size:313K  silicon standard
 ssm2313gn.pdf pdf_icon

SSM2318GEN

SSM2313GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -20V D Simple drive requirement R 120m DS(ON) Fast switching ID -2.5A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2313GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as

 8.3. Size:498K  silicon standard
 ssm2316gn.pdf pdf_icon

SSM2318GEN

SSM2316GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2316GN acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 42m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 4.7A D The SSM2316GN is supplied in an RoHS-compliant Pb-free; RoHS-c

ПОКАЗАТЬ ЕЩЁ

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