SSM40T03GH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSM40T03GH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 31.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 62 ns
Cossⓘ - Выходная емкость: 145 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: TO-252
Аналог (замена) для SSM40T03GH
SSM40T03GH Datasheet (PDF)
ssm40t03gh ssm40t03gj.pdf

SSM40T03GH,JN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement R 25mDS(ON)Fast switching ID 28AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM40T03GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC
ssm40t03gp ssm40t03gs.pdf

SSM40T03GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 25mFast switching ID 28AGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM40T03GS is in a TO-263 package, which is widely used forDScommercial and industrial surface-mount applications. This device is TO-263 (S)suitable for low-voltage applications such as DC
ssm40p03gh ssm40p03gj.pdf

SSM40P03GH,JP-CHANNEL ENHANCEMENT-MODE POWER MOSFETDLow gate-charge BV -30VDSSSimple drive requirement R 28mDS(ON)GFast switching ID -30ASDescriptionGThe SSM40P03H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The throug
ssm40n03p.pdf

SSM40N03PN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate charge BVDSS 30VSimple drive requirement R 17mDS(ON)Fast switching ID 40AGDS TO-220DescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe TO-220 package is widely preferred fo
Другие MOSFET... SSM3K35CTC , SSM3K56CT , SSM3K56FS , SSM3K56MFV , SSM3K59CTB , SSM3K72CTC , SSM40P03GH , SSM40P03GJ , BS170 , SSM40T03GJ , SSM40T03GP , SSM40T03GS , SSM4224M , SSM4226GM , SSM4228GM , SSM4232GM , SSM4407GM .
History: HGN028NE6AL | CS7456 | STF13N60M2 | SIHFD014
History: HGN028NE6AL | CS7456 | STF13N60M2 | SIHFD014



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