Справочник MOSFET. SSM4501GSD

 

SSM4501GSD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM4501GSD
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
   Тип корпуса: PDIP-8

 Аналог (замена) для SSM4501GSD

 

 

SSM4501GSD Datasheet (PDF)

 ..1. Size:249K  silicon standard
 ssm4501gsd.pdf

SSM4501GSD SSM4501GSD

SSM4501GSDN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2D1RDS(ON) 27mSimple Drive Requirement D1Low On-resistance ID 7AFast Switching Characteristic P-CH BVDSS -30VG2S2RDS(ON) 49mPDIP-8G1S1DESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of

 6.1. Size:293K  silicon standard
 ssm4501gm.pdf

SSM4501GSD SSM4501GSD

SSM4501GMN AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2Simple Drive Requirement D2RDS(ON) 28mD1Low On-resistance D1ID 7AFast Switching G2P-CH BVDSS -30VS2G1SO-8RDS(ON) 50mS1DESCRIPTION ID -5.3AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,

 8.1. Size:209K  silicon standard
 ssm4500gm.pdf

SSM4501GSD SSM4501GSD

SSM4500GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20VD2D2Simple Drive Requirement RDS(ON) 30mD1D1Low On-resistance ID 6AFast SwitchingG2P-CH BVDSS -20VS2G1SO-8S1RDS(ON) 50mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug

 8.2. Size:305K  silicon standard
 ssm4502gm.pdf

SSM4501GSD SSM4501GSD

SSM4502GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20VD2Simple Drive Requirement D1 RDS(ON) 18mD1Low Gate ChargeID 8.3AFast Switching Performance G2S2P-CH BVDSS -20VG1S1SO-8RDS(ON) 45mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin

 8.3. Size:425K  silicon standard
 ssm4509m.pdf

SSM4501GSD SSM4501GSD

SSM4509GMN- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSN-CH BVDSS 30VSimple drive requirement D2D2D2 RDS(ON) 14mLow on-resistance D1D1D1D1ID 10AFast switching characteristicG2G2P-CH BVDSS -30VS2S2 G1SO-8 S1G1RDS(ON) 20mS1 DescriptionID -8.4AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the best combination

 8.4. Size:232K  silicon standard
 ssm4507gm.pdf

SSM4501GSD SSM4501GSD

SSM4507GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2Simple Drive Requirement D2RDS(ON) 36mD2D1D1Low On-resistance D1D1ID 6.0AFast Switching Performance G2G2 P-CH BVDSS -30VS2G1 S2SO-8 S1 G1 RDS(ON) 72mSO-8 S1DESCRIPTION ID -4.2AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer w

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