IRLML6401 - описание и поиск аналогов

PD- 93756C IRLML6401 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint G 1 Low Profile (

IRLML6401PbF l Ultra Low On-Resistance HEXFET Power MOSFET l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6401 G 1 3 D S 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an

Product specification IRLML6401PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 Ultra low on-resistance. 3 P-Channel MOSFET. Fast switching. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 Ultra low on-resistance. 3 P-Channel MOSFET. Fast switching. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

IRLML6401 P-Channel Enhancement Mode Field Effect Transistor D ID V(BR)DSS RDS(on)MAX G m @-10V 60 S Equivalent Circuit -30V 70 m -4.2A @-4.5V m @-2.5V 85 FEATURE SOT-23 High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN D APPLICATION Load Switch for Portable Devic

R UMWp UMW IRLML6401 UMW IRLML6401 UMW IRLML6401 Ty P-Channel Enhancement MOSFET Features SOT 23 Ultra low on-resistance. P-Channel MOSFET. Fast switching. 1. BASE 2. EMITTER MARKING 3. COLLECTOR 1F MK Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8 Continuous Drain Cu

IRLML6401 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6401 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6401 meet the RoHS and Green Product requirement with full function reliability approved

IRLML6401 P-Channel Enhancement Mode MOSFET Feature DS(ON) GS -16V/-3A, R = 110m (MAX) @V = -4.5V. DS(ON) GS R = 140m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SOT-23 SOT-23 for Surface Mount Package Applications Power Management Portable Equipment and Battery Powered Systems. A T =25 Unless

IRLML6401 P-Channel Enhancement MOSFET RoHS Device Halogen Free SOT-23 Features l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (

PD - 96160 IRLML6401GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (

IRLML6401PbF-1 HEXFET Power MOSFET VDS -12 V RDS(on) max G 1 0.05 (@V = -4.5V) GS Qg (typical) 10 nC 3 D ID -4.3 A S 2 (@T = 25 C) A Micro3 Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Indu

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Ultra low on-resistance. P-Channel MOSFET. Fast switching. 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9 -0.2 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol

IRLML6401GTRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT

IRLML6401TRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI