SSM5G02TU Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSM5G02TU
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 110 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: 2-2R1A
Аналог (замена) для SSM5G02TU
SSM5G02TU Datasheet (PDF)
ssm5g02tu.pdf

SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre
ssm5g06fe.pdf

SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications Unit: mm Combined a P-channel MOSFET and a Schottky barrier diode in one package. 1.60.05 Optimum for high-density mounting in small packages 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET 1 5Characteristics Symbol Rating Unit2Drain-So
ssm5g09tu.pdf

SSM5G09TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 8 VDC ID -1.5 Drain curre
ssm5g04tu.pdf

SSM5G04TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre
Другие MOSFET... SSM4816SM , SSM4835M , SSM4880AGM , SSM4920M , SSM4924GM , SSM4953M , SSM4955GM , SSM4957M , IRF1010E , SSM5G04TU , IRF9530NPBF , IRF9530NSPBF , IRF9530PBF , IRF9530S , IRF9530SMD , IRF9530SPBF , IRF9540NLPBF .
History: AP9475GM | 50N06A | TK30J25D | SPP03N60S5 | NP80N055NHE | FS10UM-9
History: AP9475GM | 50N06A | TK30J25D | SPP03N60S5 | NP80N055NHE | FS10UM-9



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