Справочник MOSFET. IRLML6402

 

IRLML6402 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLML6402
   Маркировка: 1E*
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.95 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8 nC
   trⓘ - Время нарастания: 48 ns
   Cossⓘ - Выходная емкость: 145 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для IRLML6402

 

 

IRLML6402 Datasheet (PDF)

 ..1. Size:81K  international rectifier
irlml6402.pdf

IRLML6402
IRLML6402

PD- 93755IRLML6402HEXFET Power MOSFET Ultra Low On-ResistanceD P-Channel MOSFET SOT-23 FootprintVDSS = -20V Low Profile (

 ..2. Size:190K  international rectifier
irlml6402pbf.pdf

IRLML6402
IRLML6402

IRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

 ..3. Size:196K  infineon
irlml6402pbf.pdf

IRLML6402
IRLML6402

IRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

 ..4. Size:660K  shenzhen
irlml6402.pdf

IRLML6402
IRLML6402

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6402Power MOSFETl Ultra Low On-ResistanceDl P-Channel MOSFETl SOT-23 FootprintVDSS = -20Vl Low Profile (

 ..5. Size:140K  tysemi
irlml6402.pdf

IRLML6402
IRLML6402

Product specificationIRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

 ..6. Size:2191K  kexin
irlml6402.pdf

IRLML6402
IRLML6402

SMD Type MOSFETP-Channel Enhancement MOSFETIRLML6402 ( KRLML6402)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint.1 2+0.1+0.050.95 -0.1 Low profile(1.1mm). 0.1 -0.01+0.11.9 -0.1 Available in tape and reel. Fast switching.1.Base1. Gate2.Emitter2. Source3

 ..7. Size:3289K  slkor
irlml6402.pdf

IRLML6402
IRLML6402

IRLML6402LOW VOLTAGE MOSFET (P-CHANNEL) Power MOSFETl Ultra Low On-ResistanceDl P-Channel MOSFETl SOT-23 FootprintVDSS = -20Vl Low Profile (

 ..8. Size:3461K  umw-ic
irlml6402.pdf

IRLML6402
IRLML6402

RUMW UMW IRLML6402UMW IRLML6402UMW IRLML6402P-Channel Enhancement MOSFETSOT23 Features Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. Low profile(1.1mm). Available in tape and reel.1. BASE Fast switching.2. EMITTER 3. COLLECTORMARKING 1E MK Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai

 ..9. Size:520K  huashuo
irlml6402.pdf

IRLML6402
IRLML6402

IRLML6402 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6402 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6402 meet the RoHS and Green Product requirement with full function reliability approved

 ..10. Size:639K  cn shikues
irlml6402.pdf

IRLML6402
IRLML6402

IRLML6402P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature -20V/-3A, RDS(ON) = 125m(MAX) @VGS = -4.5V. GS RDS(ON) = 140m(MAX) @VGS = -2.5V. GS Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package Applications Power Managem

 ..11. Size:193K  inchange semiconductor
irlml6402.pdf

IRLML6402
IRLML6402

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRLML6402DESCRIPTIONUltra low on-resistanceP-Channel MOSFETSOT-23 FootprintAvailable in tape and reelMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIM

 0.1. Size:168K  international rectifier
irlml6402gpbf.pdf

IRLML6402
IRLML6402

PD - 96161AIRLML6402GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

 0.2. Size:187K  international rectifier
irlml6402pbf-1.pdf

IRLML6402
IRLML6402

IRLML6402PbF-1HEXFET Power MOSFETVDS -20 VRDS(on) max G 10.065 (@V = -4.5V)GSQg (typical) 8.0 nC3 DID -3.7 AS 2(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier

 0.3. Size:173K  infineon
irlml6402gpbf.pdf

IRLML6402
IRLML6402

PD - 96161AIRLML6402GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

 0.4. Size:1984K  kexin
irlml6402-3.pdf

IRLML6402
IRLML6402

SMD Type MOSFETP-Channel Enhancement MOSFETIRLML6402 ( KRLML6402)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features Ultra low on-resistance. P-Channel MOSFET.1 2 SOT-23 Footprint.+0.02+0.10.15 -0.020.95-0.1 Low profile(1.1mm). +0.11.9 -0.2 Available in tape and reel. Fast switching.1.Base1. Gate2.Emitter2. Source

 0.5. Size:913K  cn vbsemi
irlml6402trpbf.pdf

IRLML6402
IRLML6402

IRLML6402TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

 0.6. Size:1531K  cn vbsemi
irlml6402g.pdf

IRLML6402
IRLML6402

IRLML6402Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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