Справочник MOSFET. IRF9540NPBF

 

IRF9540NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF9540NPBF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 97 nC
   trⓘ - Время нарастания: 67 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.117 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF9540NPBF

 

 

IRF9540NPBF Datasheet (PDF)

 ..1. Size:922K  international rectifier
 irf9540npbf.pdf

IRF9540NPBF IRF9540NPBF

PD - 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)

 ..2. Size:922K  infineon
 irf9540npbf.pdf

IRF9540NPBF IRF9540NPBF

PD - 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)

 6.1. Size:823K  international rectifier
 auirf9540n.pdf

IRF9540NPBF IRF9540NPBF

PD - 97626AUTOMOTIVE GRADEAUIRF9540NFeaturesl Advanced Planar TechnologyDl Dynamic dV/dT RatingV(BR)DSS-100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.0.117Gl Fully Avalanche Ratedl Repetitive Avalanche AllowedID-23ASup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSSpecifically designed for Automotive ap

 6.2. Size:326K  international rectifier
 irf9540nlpbf irf9540nspbf.pdf

IRF9540NPBF IRF9540NPBF

PD - 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150

 6.3. Size:125K  international rectifier
 irf9540n.pdf

IRF9540NPBF IRF9540NPBF

PD - 91437BIRF9540NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

 6.4. Size:286K  international rectifier
 irf9540ns.pdf

IRF9540NPBF IRF9540NPBF

PD - 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t

 6.5. Size:326K  infineon
 irf9540nspbf irf9540nlpbf.pdf

IRF9540NPBF IRF9540NPBF

PD - 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150

 6.6. Size:273K  inchange semiconductor
 irf9540n.pdf

IRF9540NPBF IRF9540NPBF

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF9540N,IIRF9540NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extr

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