Справочник MOSFET. IRF9620PBF

 

IRF9620PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF9620PBF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF9620PBF

 

 

IRF9620PBF Datasheet (PDF)

 ..1. Size:1353K  international rectifier
 irf9620pbf.pdf

IRF9620PBF IRF9620PBF

PD- 95414IRF9620PbF Lead-Freewww.irf.com 106/16/04IRF9620PbF2 www.irf.comIRF9620PbFwww.irf.com 3IRF9620PbF4 www.irf.comIRF9620PbFwww.irf.com 5IRF9620PbF6 www.irf.comIRF9620PbFwww.irf.com 7IRF9620PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

 7.1. Size:160K  international rectifier
 irf9620.pdf

IRF9620PBF IRF9620PBF

 7.2. Size:1075K  international rectifier
 irf9620spbf.pdf

IRF9620PBF IRF9620PBF

PD- 95787IRF9620SPbF Lead-Free06/8/05Document Number: 91083 www.vishay.com1IRF9620SPbFDocument Number: 91083 www.vishay.com2IRF9620SPbFDocument Number: 91083 www.vishay.com3IRF9620SPbFDocument Number: 91083 www.vishay.com4IRF9620SPbFDocument Number: 91083 www.vishay.com5IRF9620SPbFDocument Number: 91083 www.vishay.com6IRF9620SPbFPeak Diode Re

 7.3. Size:165K  international rectifier
 irf9620s.pdf

IRF9620PBF IRF9620PBF

 7.4. Size:194K  vishay
 irf9620spbf sihf9620s.pdf

IRF9620PBF IRF9620PBF

IRF9620S, SiHF9620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface Mount RDS(on) ()VGS = - 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 22 Dynamic dV/dt Rating P-ChannelQgs (nC) 12 Fast SwitchingQgd (nC) 10 Ease of ParallelingConfiguration Single Simp

 7.5. Size:200K  vishay
 irf9620 sihf9620.pdf

IRF9620PBF IRF9620PBF

IRF9620, SiHF9620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available P-ChannelRDS(on) ()VGS = - 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 22COMPLIANT Ease of ParallelingQgs (nC) 12Qgd (nC) 10 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECSDESCRIPTIONT

 7.6. Size:169K  vishay
 irf9620s sihf9620s.pdf

IRF9620PBF IRF9620PBF

IRF9620S, SiHF9620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface Mount RDS(on) ()VGS = - 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 22 Dynamic dV/dt Rating P-ChannelQgs (nC) 12 Fast SwitchingQgd (nC) 10 Ease of ParallelingConfiguration Single Simp

 7.7. Size:69K  harris semi
 irf9620 irf9621 irf9622 irf9623.pdf

IRF9620PBF IRF9620PBF

IRF9620, IRF9621,S E M I C O N D U C T O RIRF9622, IRF9623-3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm,July 1998 P-Channel Power MOSFETsFeatures Description -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 1.5 and 2.4MOSFETs designed, tested, and guaranteed to withst

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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