IRF9910PBF-1 datasheet, подбор замены

 ..1. Size:259K  international rectifier
 irf9910pbf-1.pdf 

IRF9910TRPbF-1 HEXFET Power MOSFET V 20 V DS R Q1 DS(on) m ax 13.4 S2 1 8 D2 (@V = 10V) GS m R Q2 DS(on) m ax G2 2 7 D2 9.3 (@V = 10V) GS S1 3 6 D1 Q Q1 7.4 g (typical) nC Q Q2 15 G1 4 5 D1 g (typical) SO-8 I Q1 10 D(@TA = 25 C) A I Q2 12 D(@TA = 25 C) Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles

 4.1. Size:293K  international rectifier
 irf9910pbf.pdf 

PD - 95728A IRF9910PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL converters in desktop, servers, 13.4m @VGS = 10V 20V Q1 10A graphics cards, game consoles and set-top box 9.3m @VGS = 10V Q2 12A l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate R

 7.1. Size:278K  1
 irf9910.pdf 

PD - 95869 IRF9910 HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL 13.4m @VGS = 10V 20V Q1 10A converters in desktop, servers, graphics cards, game consoles 9.3m @VGS = 10V Q2 12A and set-top box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating SO-8 Abso

 9.1. Size:324K  1
 auirf9952q.pdf 

AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH 1 8 S1 D1 Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive VDSS 30V -30V 3 6 S2 D2 Dual N and P Channel MOSFET 4 5 G2 D2 RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 3.5A -2.3A

 9.2. Size:206K  international rectifier
 irf9953pbf.pdf 

PD - 95477 IRF9953PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P-Channel MOSFET VDSS = -30V 2 7 G1 D1 l Surface Mount 3 l Very Low Gate Charge and 6 S2 D2 Switching Losses 4 5 G2 D2 RDS(on) = 0.25 l Fully Avalanche Rated l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier Recommended

 9.3. Size:224K  international rectifier
 irf9952pbf.pdf 

PD - 95135 IRF9952PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 l Ultra Low On-Resistance 2 7 l Dual N and P Channel MOSFET G1 D1 l Surface Mount VDSS 30V -30V 3 6 S2 D2 l Very Low Gate Charge and 4 5 G2 D2 Switching Losses P-CHANNEL MOSFET RDS(on) 0.10 0.25 l Fully Avalanche Rated Top View l Lead-Free Recommended upgrade

 9.4. Size:169K  international rectifier
 irf9956pbf.pdf 

PD - 95259 IRF9956PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual N-Channel MOSFET VDSS = 30V 2 7 l Surface Mount G1 D1 l Very Low Gate Charge and 3 6 S2 D2 Switching Losses 4 5 G2 D2 RDS(on) = 0.10 l Fully Avalanche Rated l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier Recommended upg

 9.5. Size:134K  international rectifier
 irf9952.pdf 

PD - 9.1561A IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel MOSFET G1 D1 Surface Mount VDSS 30V -30V 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses P -CH AN N EL M OSFET RDS(on) 0.10 0.25 Fully Avalanche Rated T op V iew Recommended upgrade

 9.6. Size:107K  international rectifier
 irf9953.pdf 

PD - 9.1560A IRF9953 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses RDS(on) = 0.25 Fully Avalanche Rated T op V iew Description Fifth Generation HEXFETs from International Rectifier Recommended upgrade

 9.7. Size:280K  international rectifier
 irf9952qpbf.pdf 

PD - 96115 IRF9952QPbF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET l Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 l Available in Tape & Reel S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified P-CHANNEL MOSFET RDS(on) 0.10 0.25 l Lead-Free Top V

 9.8. Size:107K  international rectifier
 irf9956.pdf 

PD - 9.1559A IRF9956 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses RDS(on) = 0.10 Fully Avalanche Rated T op V iew Description Fifth Generation HEXFETs from International Rectifier Recommended upgrad