Справочник MOSFET. IRF9Z24NPBF

 

IRF9Z24NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF9Z24NPBF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 170 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.175 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF9Z24NPBF

 

 

IRF9Z24NPBF Datasheet (PDF)

 ..1. Size:2354K  international rectifier
 irf9z24npbf.pdf

IRF9Z24NPBF IRF9Z24NPBF

PD - 94982IRF9Z24NPbF Lead-Freewww.irf.com 1 IRF9Z24NPbF2 www.irf.comIRF9Z24NPbFwww.irf.com 3IRF9Z24NPbF4 www.irf.comIRF9Z24NPbFwww.irf.com 5IRF9Z24NPbF6 www.irf.comIRF9Z24NPbFPeak Diode Recovery dv/dt Test Circuit *

 6.1. Size:168K  international rectifier
 irf9z24ns.pdf

IRF9Z24NPBF IRF9Z24NPBF

PD - 91742AIRF9Z24NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24NS)VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175C Operating TemperatureRDS(on) = 0.175 P-ChannelG Fast SwitchingID = -12A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 6.2. Size:389K  international rectifier
 irf9z24nlpbf irf9z24nspbf.pdf

IRF9Z24NPBF IRF9Z24NPBF

PD- 95770IRF9Z24NSPbFIRF9Z24NLPBF Lead-Freewww.irf.com 104/25/05IRF9Z24NS/LPbF2 www.irf.comIRF9Z24NS/LPbFwww.irf.com 3IRF9Z24NS/LPbF4 www.irf.comIRF9Z24NS/LPbFwww.irf.com 5IRF9Z24NS/LPbF6 www.irf.comIRF9Z24NS/LPbFwww.irf.com 7IRF9Z24NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS

 6.3. Size:109K  international rectifier
 irf9z24n.pdf

IRF9Z24NPBF IRF9Z24NPBF

PD -9.1484BIRF9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -12ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

 6.4. Size:389K  infineon
 irf9z24nspbf irf9z24nlpbf.pdf

IRF9Z24NPBF IRF9Z24NPBF

PD- 95770IRF9Z24NSPbFIRF9Z24NLPBF Lead-Freewww.irf.com 104/25/05IRF9Z24NS/LPbF2 www.irf.comIRF9Z24NS/LPbFwww.irf.com 3IRF9Z24NS/LPbF4 www.irf.comIRF9Z24NS/LPbFwww.irf.com 5IRF9Z24NS/LPbF6 www.irf.comIRF9Z24NS/LPbFwww.irf.com 7IRF9Z24NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS

 6.5. Size:110K  infineon
 irf9z24n.pdf

IRF9Z24NPBF IRF9Z24NPBF

PD -9.1484BIRF9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -12ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

 6.6. Size:815K  cn vbsemi
 irf9z24ns.pdf

IRF9Z24NPBF IRF9Z24NPBF

IRF9Z24NSwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top