IRF9Z34L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9Z34L
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 34 nC
trⓘ - Время нарастания: 120 ns
Cossⓘ - Выходная емкость: 620 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
Тип корпуса: TO-262
IRF9Z34L Datasheet (PDF)
irf9z34s sihf9z34s irf9z34l sihf9z34l.pdf
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S)Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating TemperatureQgs (nC) 9.9
irf9z34l.pdf
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S)Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating TemperatureQgs (nC) 9.9
irf9z34n.pdf
PD - 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
auirf9z34n.pdf
PD - 97627AAUTOMOTIVE GRADEAUIRF9Z34NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-55Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.0.10l Fast Switching Gl Fully Avalanche RatedIDS -19Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionS
irf9z34ns.pdf
PD - 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
irf9z34nlpbf irf9z34nspbf.pdf
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
irf9z34pbf.pdf
PD - 94961IRF9Z34PbF Lead-Free01/30/04Document Number: 91092 www.vishay.com1IRF9Z34PbFDocument Number: 91092 www.vishay.com2IRF9Z34PbFDocument Number: 91092 www.vishay.com3IRF9Z34PbFDocument Number: 91092 www.vishay.com4IRF9Z34PbFDocument Number: 91092 www.vishay.com5IRF9Z34PbFDocument Number: 91092 www.vishay.com6IRF9Z34PbFTO-220AB Package O
irf9z34s.pdf
PD - 9.913AIRF9Z34S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34S)VDSS = -60V Low-profile through-hole (IRF9Z34L) 175C Operating TemperatureRDS(on) = 0.14 Fast SwitchingG P- ChannelID = -18A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
irf9z34npbf.pdf
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
irf9z34 sihf9z34.pdf
IRF9Z34, SiHF9Z34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = - 10 V 0.14 P-Channel RoHS*Qg (Max.) (nC) 34COMPLIANT 175 C Operating TemperatureQgs (nC) 9.9 Fast SwitchingQgd (nC) 16 Ease of ParallelingConfiguration Single Simple Drive Requireme
irf9z34spbf sihf9z34l sihf9z34s.pdf
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S)Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating TemperatureQgs (nC) 9.9
irf9z34pbf sihf9z34.pdf
IRF9Z34, SiHF9Z34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = - 10 V 0.14 P-Channel RoHS*Qg (Max.) (nC) 34COMPLIANT 175 C Operating TemperatureQgs (nC) 9.9 Fast SwitchingQgd (nC) 16 Ease of ParallelingConfiguration Single Simple Drive Requireme
irf9z34nspbf irf9z34nlpbf.pdf
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
irf9z34npbf.pdf
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
irf9z34ns.pdf
IRF9Z34NSwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load
irf9z34n.pdf
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34NFEATURESStatic drain-source on-resistance:RDS(on)0.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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