SSM5G06FE - параметры транзистора MOSFET, его аналоги, datasheet

SSM5G06FE Datasheet (PDF)

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SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications Unit: mm Combined a P-channel MOSFET and a Schottky barrier diode in one package. 1.60.05 Optimum for high-density mounting in small packages 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET 1 5Characteristics Symbol Rating Unit2Drain-So

8.1. Size:218K toshiba
ssm5g02tu.pdf pdf_icon

SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre

8.2. Size:306K toshiba
ssm5g09tu.pdf pdf_icon

SSM5G09TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 8 VDC ID -1.5 Drain curre

8.3. Size:205K toshiba
ssm5g04tu.pdf pdf_icon

SSM5G04TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12 VDC ID -1.0 Drain curre

Другие MOSFET... IRFAE30 , IRFAE40 , IRFAE50 , IRFAF30 , IRFAF50 , IRFAG30 , IRFAG40 , IRFAG50 , 8N60 , SSM5G09TU , SSM5G10TU , SSM5G11TU , SSM5H01TU , SSM5H05TU , SSM5H06FE , SSM5H07TU , SSM5H08TU .