Справочник MOSFET. SSM9563M

 

SSM9563M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM9563M
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SSM9563M

 

 

SSM9563M Datasheet (PDF)

 ..1. Size:526K  silicon standard
ssm9563m.pdf

SSM9563M
SSM9563M

SSM9563GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9563GM acheives fast switching performanceBVDSS -40Vwith low gate charge without a complex drive circuit. ItRDS(ON) 40mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -6AD The SSM9563GM is supplied in an RoHS-compliantPb-free; RoHS-c

 8.1. Size:531K  silicon standard
ssm9567gm.pdf

SSM9563M
SSM9563M

SSM9567GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9567GM acheives fast switching performanceBVDSS -40Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -6AD The SSM9567GM is supplied in an RoHS-compliantPb-free; RoHS-c

 8.2. Size:526K  silicon standard
ssm9564gm.pdf

SSM9563M
SSM9563M

SSM9564GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9564GM acheives fast switching performanceBVDSS -40Vwith low gate charge without a complex drive circuit. ItRDS(ON) 28mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -7.3AD The SSM9564GM is supplied in an RoHS-compliantPb-free; RoHS

 9.1. Size:729K  secos
ssm9575.pdf

SSM9563M
SSM9563M

SSM9575 -4A , -60V , RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free DESCRIPTION SOT-223 The SSM9575 provide the designer with the best combination of fast switching, ruggedized device Adesign, low on-resistance and cost-effectiveness. M4FEATURES Top ViewC B1

 9.2. Size:303K  silicon standard
ssm9585gm ssm9585gp.pdf

SSM9563M
SSM9563M

SSM9585GMP-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS -80VLower gate charge RDS(ON) 180mFast switching characteristics I -2.7ADGPb-free; RoHS compliant.SDESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe

 9.3. Size:244K  silicon standard
ssm95t07gp.pdf

SSM9563M
SSM9563M

SSM95T07GPN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 75VSimple Drive Requirement RDS(ON) 5mLower On-resistance ID 80AGFast Switching Characteristic RoHS Compliant SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

 9.4. Size:430K  silicon standard
ssm9510gm.pdf

SSM9563M
SSM9563M

SSM9510GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 30VSimple drive requirement D2D2D2 RDS(ON) 28mLower gate charge D1D1D1D1ID 6.9AFast switching characteristicsG2G2P-CH BVDSS -30VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 55mS1 DESCRIPTIONID -5.3AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer

 9.5. Size:287K  silicon standard
ssm95t06gp ssm95t06gs.pdf

SSM9563M
SSM9563M

SSM95T06GP,SN-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60VDSSDSimple drive requirement R 8.5mDS(ON)Fast switching ID 75AGSDescriptionGThe SSM95T06S is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as DC/DC converters. The throug

 9.6. Size:223K  silicon standard
ssm9575m.pdf

SSM9563M
SSM9563M

SSM9575M/GMP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -60VDSSDDLow on-resistance R 90mDS(ON)DDFast switching characteristics ID -4AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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