SSM95T06GS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSM95T06GS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 138 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 76 ns
Cossⓘ - Выходная емкость: 900 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO-263
- подбор MOSFET транзистора по параметрам
SSM95T06GS Datasheet (PDF)
ssm95t06gp ssm95t06gs.pdf

SSM95T06GP,SN-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60VDSSDSimple drive requirement R 8.5mDS(ON)Fast switching ID 75AGSDescriptionGThe SSM95T06S is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as DC/DC converters. The throug
ssm95t07gp.pdf

SSM95T07GPN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 75VSimple Drive Requirement RDS(ON) 5mLower On-resistance ID 80AGFast Switching Characteristic RoHS Compliant SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a
ssm9575.pdf

SSM9575 -4A , -60V , RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free DESCRIPTION SOT-223 The SSM9575 provide the designer with the best combination of fast switching, ruggedized device Adesign, low on-resistance and cost-effectiveness. M4FEATURES Top ViewC B1
ssm9585gm ssm9585gp.pdf

SSM9585GMP-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS -80VLower gate charge RDS(ON) 180mFast switching characteristics I -2.7ADGPb-free; RoHS compliant.SDESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPD14N06S2-80 | SI2312 | 2SK3572-Z | FDMC7208S | AONR21357 | SM6024PSF | HA25N50
History: IPD14N06S2-80 | SI2312 | 2SK3572-Z | FDMC7208S | AONR21357 | SM6024PSF | HA25N50



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