IRLR024A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLR024A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 30 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 15 nC
Время нарастания (tr): 21 ns
Выходная емкость (Cd): 195 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
Тип корпуса: TO252
IRLR024A Datasheet (PDF)
irlr024a.pdf
IRLR/U024AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.061 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ra
auirlr024n auirlu024n.pdf
AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com
irlr024npbf irlu024npbf.pdf
PD- 95081AIRLR024NPbFIRLU024NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Surface Mount (IRLR024N) VDSS = 55Vl Straight Lead (IRLU024N)l Advanced Process TechnologyRDS(on) = 0.065Gl Fast Switchingl Fully Avalanche RatedID = 17ASl Lead-FreeDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techni
irlr024pbf irlu024pbf.pdf
PD- 96091IRLR024PbFIRLU024PbFHEXFET Power MOSFET Lead-FreeDescriptionAbsolute Maximum Ratings08/01/06Document Number: 91322 www.vishay.com1IRLR/U024PbFDocument Number: 91322 www.vishay.com2IRLR/U024PbFDocument Number: 91322 www.vishay.com3IRLR/U024PbFDocument Number: 91322 www.vishay.com4IRLR/U024PbFDocument Number: 91322 www.vishay.com5IRLR
irlr024n.pdf
PD- 91363EIRLR024NIRLU024NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.065G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve the lowes
irlr024zpbf irlu024zpbf.pdf
PD - 95773BIRLR024ZPbFIRLU024ZPbFHEXFET Power MOSFETFeaturesn Logic LevelDn Advanced Process TechnologyVDSS = 55Vn Ultra Low On-Resistancen 175C Operating TemperatureRDS(on) = 58mn Fast SwitchingGn Repetitive Avalanche Allowed up to Tjmaxn Lead-Free ID = 16ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ext
auirlr024ntr.pdf
PD- 96348AUTOMOTIVE GRADEAUIRLR024NAUIRLU024NFeatures Advanced Planar TechnologyHEXFET Power MOSFET Low On-ResistanceD Logic-Level Gate DriveV(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.065 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual
irlr024 irlu024 sihlr024 sihlu024.pdf
IRLR024, IRLU024, SiHLR024, SiHLU024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR024/SiHLR024)RDS(on) ()VGS = 5.0 V 0.10RoHS* Straight Lead (IRLU024/SiHLU024)Qg (Max.) (nC) 18COMPLIANT Available in Tape and ReelQgs (nC) 4.5Qgd (nC) 12 Logic-Level Gate DriveConfiguration Single
auirlr024z auirlu024z.pdf
AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De
irlr024npbf irlu024npbf.pdf
PD- 95081AIRLR024NPbFIRLU024NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Surface Mount (IRLR024N) VDSS = 55Vl Straight Lead (IRLU024N)l Advanced Process TechnologyRDS(on) = 0.065Gl Fast Switchingl Fully Avalanche RatedID = 17ASl Lead-FreeDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techni
irlr024n.pdf
isc N-Channel MOSFET Transistor IRLR024N, IIRLR024NFEATURESStatic drain-source on-resistance:RDS(on)65mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-
Другие MOSFET... IRLMS5703 , IRLMS6702 , IRLMS6802 , IRLR010 , IRLR014 , IRLR014A , IRLR020 , IRLR024 , 2N60 , IRLR024N , IRLR110A , IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRLR220A , IRLR230A .
