SSM9934GM2N AND 2P-CHANNEL ENHANCEMENTMODE POWER MOSFETPRODUCT SUMMARY P2GN-CH BVDSS 35VN2D/P2DSimple Drive Requirement RDS(ON) 48mP1S/P2SLow On-resistance P1GID 4.3AN2GFull Bridge Application on N1S/N2SP-CH BVDSS -35VLCD Monitor Inverter N1D/P1DN1GSO-8RDS(ON) 72mDESCRIPTION ID -3.6AP1S P2SThe advanced power MOSFETs from Silicon Standard Corp. p

SSM9930MDUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSP2GSimple drive requirement N-CH BV 30VDSSN2D/P2DLow on-resistance R 33mP1S/P2S DS(ON)P1GFull-bridge applications, such as I 6.3AN2GDN1S/N2S LCD monitor inverter P-CH BV -30VDSSN1D/P1DN1GSO-8RDS(ON) 55mDescription ID -5.1AAdvanced Power MOSFETs from Silicon Standard provide theP1S P

SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi

SSM9977M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VDSSD2D2Lower gate charge R 90mDS(ON)D1D1Fast switching characteristics ID 3.5AG2S2G1SO-8S1Description D2D1Advanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistance

SSM9960M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 40VD2 DSSD2D1Lower gate charge R 20mDS(ON)D1Fast switching characteristics ID 7.8AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and

SSM9975M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VD2 DSSD2D1Lower gate charge R 21mDS(ON)D1Fast switching characteristics ID 7.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and

SSM9926GMDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9926GM acheives fast switching performanceBVDSS 20Vwith low gate charge without a complex drive circuit. ItRDS(ON) 30mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 6AD The SSM9926GM is supplied in an RoHS-compliantPb-free; Ro

SSM9973GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 80mDS(ON)Fast switching ID 14AGSDescriptionGThe SSM9973GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

SSM9985GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40VDFast Switching Speed DD RDS(ON) 15mSurface Mount Package DID 10AGSSSO-8SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. Dprovide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

SSM9915H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VD DSSCapable of 2.5V gate drive R 50mDS(ON)Low drive current I 20ADGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effective

SSM9926ON-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2D1Low on-resistance Capable of 2.5V gate drive G2G1Low drive current S1 S2Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching,ruggedized device design, ultra l

SSM9974GP,SN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9974 acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. It isRDS(ON) 12msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 72AD The SSM9974GS is in a TO-263 package, which isPb-free; RoHS-co

SSM9922(G)EODUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSCapable of 2.5V gate drive RDS(ON) 15mG2S2S2Ideal for DC/DC battery applications D2 ID 6.8AG1S1S1TSSOP-8D1DescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resist

SSM9987GHN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY BVDSS 80VDRDS(ON) 90mLow Gate Charge Single Drive Requirement ID 15AGFast Switching Performance SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. GDSprovide the designer with the best combination of fast switching, TO-252(H)ruggedized device design, low on-resistance and c

SSM9972GP,SN-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60VDSSDSimple drive requirement R 18mDS(ON)Fast switching ID 60AGSDescriptionGThe SSM9972GS is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as DC/DC converters. The through-

SSM9915KN-CHANNEL ENHANCEMENT MODE POWER MOSFETSimple drive requirement BVDSS 20VDLower gate charge RDS(ON) 50mFast switching characteristic ID 6.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Para

SSM9973GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 60VD2D2D1Lower gate charge R RDS(ON) 80mD1Fast switching characteristicsI 3.9AIIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice

SSM9980M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 80VD2 DSSD2D1Lower gate charge R 52mDS(ON)D1Fast switching characteristics ID 4.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and

SSM9980GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9980Gx acheives fast switching performanceBVDSS 80Vwith low gate charge without a complex drive circuit. It isRDS(ON) 45msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 21AD The SSM9980GH is in a TO-252 package, which isPb-free; RoHS-

SSM9977GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 90mDS(ON)Fast switching ID 11AGSDescriptionGThe SSM9977GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

SSM9926TGON-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY D2D1Low on-resistance Capable of 2.5V gate drive G2G1Surface mount package S1 S2DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.

SSM9928(G)EODUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSCapable of 2.5V gate drive RDS(ON) 23mG2S2S2Ideal for DC/DC battery applications D2 ID 5AG1S1S1TSSOP-8D1DescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resistan

SSM9928ON-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY D1 D2Low on-resistance G1 G2Capable of 2.5V gate drive Optimal DC/DC battery application S1 S2DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast RDS(ON) 23m switching, ruggedized device design, ultra low on-resistance I

SSM9926EMN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSD2D2Capable of 2.5V gate drive D1 RDS(ON) 30mD1Low drive current I 6ADG2S2Surface-mount packageG1SO-8S1DescriptionPower MOSFETs from Silicon Standard provide the D1 D2designer with the best combination of fast switching,G1 G2ruggedized device design, ultra low on-resistance a

SSM9987GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY D2D2Low Gate Charge BVDSS 80VD1D1Single Drive Requirement RDS(ON) 90mG2Surface Mount Package S2ID 3.5AG1SO-8 S1DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D2D1provide the designer with the best combination of fast switching, ruggedized device design, lower on-resi

SSM9971GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 36mDS(ON)Fast switching ID 25AGSDescriptionGThe SSM9971GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

SSM9918H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VDSSDCapable of 2.5V gate drive R 14mDS(ON)Low drive current I 45ADGSurface mount packageSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectivene

SSM9960(G)H,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 40VDSSDSimple drive requirement R 16mDS(ON)Fast switching ID 42AGSDescriptionGThe SSM9960H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-

SSM9972GIN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9972GI achieves fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 18mis suitable for low voltage applications such as DC/DCconverters and general switching circuits.I 35AD Pb-free; RoHS-compliant TO-220CFMThe SSM9972GI is in TO-220CFM for

SSM9971GMDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9971GM acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 5AD The SSM2310GM is supplied in an RoHS-compliantPb-free; Ro

SSM9962M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 40VD2 DSSD2D1Lower gate charge R 25mDS(ON)D1Fast switching characteristics ID 7AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and co

SSM9926GEON-CHANNEL ENHANCEMENT-MODE POWER MOSFETSG2Low on-resistance BV 20VDSSS2S2D2Capable of 2.5V gate drive RDS(ON) 28mG1S1Low drive current S1 I 4.6ADTSSOP-8D1Surface-mount packageDescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resista

SSM9916H,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BV 18VD DSSCapable of 2.5V gate drive RDS(ON) 25mLow drive current ID 35AGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness

SSM9971GDDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9971GD acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 5AD The SSM2310GD is supplied in an RoHS-compliantPb-free; Ro