IRLR/U110AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

PD - 95601AIRLR110PbFIRLU110PbF Lead-Free1/10/05Document Number: 91323 www.vishay.com1IRLR/U110PbFDocument Number: 91323 www.vishay.com2IRLR/U110PbFDocument Number: 91323 www.vishay.com3IRLR/U110PbFDocument Number: 91323 www.vishay.com4IRLR/U110PbFDocument Number: 91323 www.vishay.com5IRLR/U110PbFDocument Number: 91323 www.vishay.com6IRLR/U11

IRLR110, IRLU110, SiHLR110, SiHLU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 5.0 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110)Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110)Qgd (nC) 3.3 Available i

IRLR110, IRLU110, SiHLR110, SiHLU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 5.0 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110)Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110)Qgd (nC) 3.3 Available i