SSM9973GM datasheet, подбор замены

 ..1. Size:274K  silicon standard
 ssm9973gm.pdf 

SSM9973GM Dual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 60V D2 D2 D1 Lower gate charge R RDS(ON) 80m D1 Fast switching characteristics I 3.9A I ID G2 S2 Pb-free; RoHS compliant. G1 SO-8 S1 DESCRIPTION D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device

 6.1. Size:280K  silicon standard
 ssm9973gh ssm9973gj.pdf 

SSM9973GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 80m DS(ON) Fast switching ID 14A G S Description G The SSM9973GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-h

 8.1. Size:587K  secos
 ssm9971.pdf 

SSM9971 5A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-223 The SSM9971 provide the designer with the best combination of fast switching,low on-resistance, cost-effectiveness and ruggedized device design. Features * Simple Drive Requirement * Low On-Resistance Millimeter Millimeter REF. REF. Mi

 8.2. Size:238K  silicon standard
 ssm9977gm.pdf 

SSM9977M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 60V DSS D2 D2 Lower gate charge R 90m DS(ON) D1 D1 Fast switching characteristics ID 3.5A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the G2 G1 designer with the best combination of fast switching, ruggedized device design, low on-resistance

 8.3. Size:249K  silicon standard
 ssm9975m.pdf 

SSM9975M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 60V D2 DSS D2 D1 Lower gate charge R 21m DS(ON) D1 Fast switching characteristics ID 7.6A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and

 8.4. Size:717K  silicon standard
 ssm9974gp ssm9974gs.pdf 

SSM9974GP,S N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9974 acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It is RDS(ON) 12m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 72A D The SSM9974GS is in a TO-263 package, which is Pb-free; RoHS-co

 8.5. Size:293K  silicon standard
 ssm9972gp ssm9972gs.pdf 

SSM9972GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 18m DS(ON) Fast switching ID 60A G S Description G The SSM9972GS is in a TO-263 package, which is widely used for D S commercial and industrial surface mount applications, and is well suited TO-263 (S) for low voltage applications such as DC/DC converters. The through-

 8.6. Size:277K  silicon standard
 ssm9977gh ssm9977gj.pdf 

SSM9977GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 90m DS(ON) Fast switching ID 11A G S Description G The SSM9977GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-h

 8.7. Size:280K  silicon standard
 ssm9971gh ssm9971gj.pdf 

SSM9971GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 36m DS(ON) Fast switching ID 25A G S Description G The SSM9971GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-h

 8.8. Size:559K  silicon standard
 ssm9972gi.pdf 

SSM9972GI N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9972GI achieves fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 18m is suitable for low voltage applications such as DC/DC converters and general switching circuits. I 35A D Pb-free; RoHS-compliant TO-220CFM The SSM9972GI is in TO-220CFM for

 8.9. Size:524K  silicon standard
 ssm9971gm.pdf 

SSM9971GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9971GM acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 5A D The SSM2310GM is supplied in an RoHS-compliant Pb-free; Ro

 8.10. Size:568K  silicon standard
 ssm9971gd.pdf 

SSM9971GD Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9971GD acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 5A D The SSM2310GD is supplied in an RoHS-compliant Pb-free; Ro