IRLR120A - Даташиты. Аналоги. Основные параметры

IRLR/U120A FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

PD- 95382A IRLR120PbF IRLU120PbF Lead-Free 12/07/04 Document Number 91324 www.vishay.com 1 IRLR/U120PbF Document Number 91324 www.vishay.com 2 IRLR/U120PbF Document Number 91324 www.vishay.com 3 IRLR/U120PbF Document Number 91324 www.vishay.com 4 IRLR/U120PbF Document Number 91324 www.vishay.com 5 IRLR/U120PbF Document Number 91324 www.vishay.com 6 IRLR/U12

PD - 91541B IRLR/U120N HEXFET Power MOSFET Surface Mount (IRLR120N) D Straight Lead (IRLU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.185 Fully Avalanche Rated G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Th

IRLR120NPbF IRLU120NPbF HEXFET Power MOSFET l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) D l Advanced Process Technology VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.185 l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize ID = 10A S advanced processing techniques to achieve the lowest possible on-resistance pe

IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5.0 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Surface Mount (IRLR120, SiHLR120) Qgs (nC) 3.0 Straight Lead (IRLU120, SiHLU120) Qgd (nC) 7.1 Available in

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175 C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

IRLR120NTR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor IRLR120N, IIRLR120N FEATURES Static drain-source on-resistance RDS(on) 185m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat

iscN-Channel MOSFET Transistor IRLR120 FEATURES Low drain-source on-resistance RDS(ON) 0.27 @V =5V GS Enhancement mode Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER