SSP3N90 - аналоги, даташиты, параметры транзистора

SSP3N90 Datasheet (PDF)

..1. Size:260K fairchild semi
ssp3n90.pdf pdf_icon

SSP3N90AAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

0.1. Size:936K samsung
ssp3n90a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

9.1. Size:305K 1
ssh3n70 ssp3n70.pdf pdf_icon

9.2. Size:937K samsung
ssp3n80a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Другие MOSFET... SSM9980GH , SSM9980GJ , SSM9980M , SSM9985GM , SSM9987GH , SSM9987GM , SSN1N45BBU , SSN1N45BTA , IRF1404 , SSP45N20B , SSP4N60B , SSP4N80 , SSP5N90 , SSR1N45 , SSR1N60B , SSR1N60BTM , SSR2N60B .