Справочник MOSFET. AFN1304

 

AFN1304 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFN1304
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 20 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
   Тип корпуса: SOT-323
 

 Аналог (замена) для AFN1304

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN1304 Datasheet (PDF)

 ..1. Size:592K  alfa-mos
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AFN1304

AFN1304 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m@VGS=1.8V These devices are particularly suited for low S

 0.1. Size:593K  alfa-mos
afn1304e.pdfpdf_icon

AFN1304

AFN1304E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304E, N-Channel enhancement mode 20V/1.8A,RDS(ON)=400m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m@VGS=1.8V These devices are particularly suited for low

 8.1. Size:799K  alfa-mos
afn1306.pdfpdf_icon

AFN1304

AFN1306 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1306, N-Channel enhancement mode 30V/1.5A,RDS(ON)=430m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.2A,RDS(ON)=580m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.6A,RDS(ON)=860m@VGS=1.8V These devices are particularly suited for low S

 9.1. Size:270K  alfa-mos
afn1330s.pdfpdf_icon

AFN1304

AFN1330S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)=7.5@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.05A , R DS(ON)=7.5@VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

Другие MOSFET... AFN10N60T220FT , AFN10N60T220T , AFN10N65T220FT , AFN10N65T220T , AFN12N60T220FT , AFN12N60T220T , AFN12N65T220FT , AFN12N65T220T , 2SK3918 , AFN1304E , AFN1306 , AFN1330S , AFN1443 , AFN1501S , AFN1510S , AFN1520 , AFN1530 .

History: NTB18N06G | IRF034 | BUK9K35-60E

 

 
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