AFN2304 - аналоги, даташиты, параметры транзистора

AFN2304 Datasheet (PDF)

..1. Size:563K alfa-mos
afn2304.pdf pdf_icon

AFN2304 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

0.1. Size:476K alfa-mos
afn2304s.pdf pdf_icon

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

0.2. Size:608K alfa-mos
afn2304as.pdf pdf_icon

AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

0.3. Size:604K alfa-mos
afn2304a.pdf pdf_icon

AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

Другие MOSFET... AFN1520 , AFN1530 , AFN1912 , AFN1912E , AFN1932 , AFN2014 , AFN2302AS , AFN2302S , IRF540N , AFN2304A , AFN2304AS , AFN2304S , AFN2306A , AFN2306AE , AFN2308 , AFN2308A , AFN2312 .