AFN2304A - аналоги и даташиты транзистора

 

AFN2304A - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AFN2304A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.082 Ohm
   Тип корпуса: SOT-23
 

 Аналог (замена) для AFN2304A

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN2304A Datasheet (PDF)

 ..1. Size:604K  alfa-mos
 afn2304a.pdf pdf_icon

AFN2304A

AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 0.1. Size:608K  alfa-mos
 afn2304as.pdf pdf_icon

AFN2304A

AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 7.1. Size:476K  alfa-mos
 afn2304s.pdf pdf_icon

AFN2304A

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.2. Size:563K  alfa-mos
 afn2304.pdf pdf_icon

AFN2304A

AFN2304 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AFN1530 , AFN1912 , AFN1912E , AFN1932 , AFN2014 , AFN2302AS , AFN2302S , AFN2304 , 50N06 , AFN2304AS , AFN2304S , AFN2306A , AFN2306AE , AFN2308 , AFN2308A , AFN2312 , AFN2312A .

History: HGN110N08AL | VBQA2305

 

 
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