AFN2324 datasheet, подбор замены

 ..1. Size:546K  alfa-mos
 afn2324.pdf 

AFN2324 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 0.1. Size:678K  alfa-mos
 afn2324a.pdf 

AFN2324A Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=320m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

 9.1. Size:721K  alfa-mos
 afn2306ae.pdf 

AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low

 9.2. Size:678K  alfa-mos
 afn2330a.pdf 

AFN2330A Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.3. Size:552K  alfa-mos
 afn2354.pdf 

AFN2354 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.6A,RDS(ON)=160m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.4. Size:559K  alfa-mos
 afn2376.pdf 

AFN2376 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=78m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.5. Size:476K  alfa-mos
 afn2304s.pdf 

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.6. Size:608K  alfa-mos
 afn2304as.pdf 

AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.7. Size:719K  alfa-mos
 afn2306a.pdf 

AFN2306A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low

 9.8. Size:484K  alfa-mos
 afn2308.pdf 

AFN2308 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.9. Size:616K  alfa-mos
 afn2308a.pdf 

AFN2308A Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.10. Size:652K  alfa-mos
 afn2302as.pdf 

AFN2302AS Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=110m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 9.11. Size:268K  alfa-mos
 afn2318.pdf 

AFN2318 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)= 60m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.8A,RDS(ON)= 80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.12. Size:563K  alfa-mos
 afn2304.pdf 

AFN2304 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.13. Size:549K  alfa-mos
 afn2312.pdf 

AFN2312 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V These devices are particularly suited for low Supe

 9.14. Size:604K  alfa-mos
 afn2304a.pdf 

AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 9.15. Size:400K  alfa-mos
 afn2318a.pdf 

AFN2318A Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)= 68m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.2A,RDS(ON)= 88m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.16. Size:681K  alfa-mos
 afn2312a.pdf 

AFN2312A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.2A,RDS(ON)=48m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m @VGS=1.8V These devices are particularly suited for low Su

 9.17. Size:520K  alfa-mos
 afn2302s.pdf 

AFN2302S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=100m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.18. Size:546K  alfa-mos
 afn2330.pdf 

AFN2330 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.19. Size:694K  alfa-mos
 afn2336a.pdf 

AFN2336A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.5A,RDS(ON)=480m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.5A,RDS(ON)=900m @VGS=1.8V These devices are particularly suited for low