AFN2354 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFN2354
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 50 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.145 Ohm
Тип корпуса: SOT-23
AFN2354 Datasheet (PDF)
afn2354.pdf
AFN2354 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.6A,RDS(ON)=160m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn2306ae.pdf
AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low
afn2330a.pdf
AFN2330A Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn2324.pdf
AFN2324 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn2376.pdf
AFN2376 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=78m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn2304s.pdf
AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn2304as.pdf
AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn2306a.pdf
AFN2306A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low
afn2308.pdf
AFN2308 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn2308a.pdf
AFN2308A Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn2324a.pdf
AFN2324A Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
afn2302as.pdf
AFN2302AS Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=110m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
afn2318.pdf
AFN2318 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)= 60m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.8A,RDS(ON)= 80m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn2304.pdf
AFN2304 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn2312.pdf
AFN2312 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Supe
afn2304a.pdf
AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f
afn2318a.pdf
AFN2318A Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)= 68m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.2A,RDS(ON)= 88m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn2312a.pdf
AFN2312A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.2A,RDS(ON)=48m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m@VGS=1.8V These devices are particularly suited for low Su
afn2302s.pdf
AFN2302S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=100m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn2330.pdf
AFN2330 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn2336a.pdf
AFN2336A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.5A,RDS(ON)=480m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.5A,RDS(ON)=900m@VGS=1.8V These devices are particularly suited for low
Другие MOSFET... AFN2312A , AFN2318 , AFN2318A , AFN2324 , AFN2324A , AFN2330 , AFN2330A , AFN2336A , 2SK3878 , AFN2376 , AFN2604 , AFN2912W , AFN3006S , AFN3009S , AFN3015S , AFN3016S , AFN3019S .
Список транзисторов
Обновления
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