AFN2376 datasheet, аналоги, основные параметры
Наименование производителя: AFN2376 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 40 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
Тип корпуса: SOT-23
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Аналог (замена) для AFN2376
- подборⓘ MOSFET транзистора по параметрам
AFN2376 даташит
..1. Size:559K alfa-mos
afn2376.pdf 
AFN2376 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=78m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.1. Size:721K alfa-mos
afn2306ae.pdf 
AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low
9.2. Size:678K alfa-mos
afn2330a.pdf 
AFN2330A Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.3. Size:552K alfa-mos
afn2354.pdf 
AFN2354 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.6A,RDS(ON)=160m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.4. Size:546K alfa-mos
afn2324.pdf 
AFN2324 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.5. Size:476K alfa-mos
afn2304s.pdf 
AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.6. Size:608K alfa-mos
afn2304as.pdf 
AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.7. Size:719K alfa-mos
afn2306a.pdf 
AFN2306A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low
9.8. Size:484K alfa-mos
afn2308.pdf 
AFN2308 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.9. Size:616K alfa-mos
afn2308a.pdf 
AFN2308A Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.10. Size:678K alfa-mos
afn2324a.pdf 
AFN2324A Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=320m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
9.11. Size:652K alfa-mos
afn2302as.pdf 
AFN2302AS Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=110m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
9.12. Size:268K alfa-mos
afn2318.pdf 
AFN2318 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)= 60m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.8A,RDS(ON)= 80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.13. Size:563K alfa-mos
afn2304.pdf 
AFN2304 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.14. Size:549K alfa-mos
afn2312.pdf 
AFN2312 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V These devices are particularly suited for low Supe
9.15. Size:604K alfa-mos
afn2304a.pdf 
AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f
9.16. Size:400K alfa-mos
afn2318a.pdf 
AFN2318A Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)= 68m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.2A,RDS(ON)= 88m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.17. Size:681K alfa-mos
afn2312a.pdf 
AFN2312A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.2A,RDS(ON)=48m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m @VGS=1.8V These devices are particularly suited for low Su
9.18. Size:520K alfa-mos
afn2302s.pdf 
AFN2302S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=100m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.19. Size:546K alfa-mos
afn2330.pdf 
AFN2330 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.20. Size:694K alfa-mos
afn2336a.pdf 
AFN2336A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.5A,RDS(ON)=480m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.5A,RDS(ON)=900m @VGS=1.8V These devices are particularly suited for low
Другие IGBT... AFN2318, AFN2318A, AFN2324, AFN2324A, AFN2330, AFN2330A, AFN2336A, AFN2354, 8205A, AFN2604, AFN2912W, AFN3006S, AFN3009S, AFN3015S, AFN3016S, AFN3019S, AFN3025S
