AFN3009S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AFN3009S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 210 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO-252
Аналог (замена) для AFN3009S
AFN3009S Datasheet (PDF)
afn3009s.pdf

AFN3009S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=11.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f
afn3006s.pdf

AFN3006S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3006S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo
afn3019s.pdf

AFN3019S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l
afn3025s.pdf

AFN3025S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/7.0A,RDS(ON)=36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Sup
Другие MOSFET... AFN2330 , AFN2330A , AFN2336A , AFN2354 , AFN2376 , AFN2604 , AFN2912W , AFN3006S , K3569 , AFN3015S , AFN3016S , AFN3019S , AFN3025S , AFN3030 , AFN3302W , AFN3306WS , AFN3309WS .
History: SH8K15 | IRFI4229PBF | GSM6561 | SIHF820L | STP60NE06L-16 | IXTQ50N25T | SH8M11
History: SH8K15 | IRFI4229PBF | GSM6561 | SIHF820L | STP60NE06L-16 | IXTQ50N25T | SH8M11



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