Справочник MOSFET. AFN3009S

 

AFN3009S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFN3009S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 210 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для AFN3009S

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN3009S Datasheet (PDF)

 ..1. Size:823K  alfa-mos
 afn3009s.pdf pdf_icon

AFN3009S

AFN3009S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=11.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 8.1. Size:863K  alfa-mos
 afn3006s.pdf pdf_icon

AFN3009S

AFN3006S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3006S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.1. Size:853K  alfa-mos
 afn3019s.pdf pdf_icon

AFN3009S

AFN3019S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

 9.2. Size:772K  alfa-mos
 afn3025s.pdf pdf_icon

AFN3009S

AFN3025S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/7.0A,RDS(ON)=36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Sup

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History: SI4491EDY | NVF6P02 | AP9591GS | TSM20N50CI | STT3PF20V | TDM3415 | DMN95H8D5HCT

 

 
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