Справочник MOSFET. AFN3016S

 

AFN3016S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFN3016S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 210 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для AFN3016S

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN3016S Datasheet (PDF)

 ..1. Size:824K  alfa-mos
 afn3016s.pdf pdf_icon

AFN3016S

AFN3016S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 8.1. Size:853K  alfa-mos
 afn3019s.pdf pdf_icon

AFN3016S

AFN3019S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

 8.2. Size:863K  alfa-mos
 afn3015s.pdf pdf_icon

AFN3016S

AFN3015S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.8m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.1. Size:863K  alfa-mos
 afn3006s.pdf pdf_icon

AFN3016S

AFN3006S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3006S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AFN2336A , AFN2354 , AFN2376 , AFN2604 , AFN2912W , AFN3006S , AFN3009S , AFN3015S , IRFP260 , AFN3019S , AFN3025S , AFN3030 , AFN3302W , AFN3306WS , AFN3309WS , AFN3310W , AFN3316W .

History: TK11A50D | FTK15N10D | IRF321 | QM2404C1 | SUP60N10-16L | 7506 | SI8451DB

 

 
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