AFN3310W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFN3310W
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 36 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 180 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.017 Ohm
Тип корпуса: DFN3X3
AFN3310W Datasheet (PDF)
afn3310w.pdf
AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3316w.pdf
AFN3316W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/6A,RDS(ON)=148m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3309ws.pdf
AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3306ws.pdf
AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn3302w.pdf
AFN3302W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/12A,RDS(ON)=18m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V These devices are particularly suited for low Super
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
