AFN3310W datasheet, аналоги, основные параметры

Наименование производителя: AFN3310W  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 36 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 180 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm

Тип корпуса: DFN3X3

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Аналог (замена) для AFN3310W

- подборⓘ MOSFET транзистора по параметрам

 

AFN3310W даташит

 ..1. Size:498K  alfa-mos
 afn3310w.pdf pdf_icon

AFN3310W

AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:514K  alfa-mos
 afn3316w.pdf pdf_icon

AFN3310W

AFN3316W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/6A,RDS(ON)=148m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:588K  alfa-mos
 afn3309ws.pdf pdf_icon

AFN3310W

AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.2. Size:596K  alfa-mos
 afn3306ws.pdf pdf_icon

AFN3310W

AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

ПОКАЗАТЬ ЕЩЁ

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