AFN3310W - аналоги и даташиты транзистора

 

AFN3310W - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AFN3310W
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
   Тип корпуса: DFN3X3
 

 Аналог (замена) для AFN3310W

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN3310W Datasheet (PDF)

 ..1. Size:498K  alfa-mos
 afn3310w.pdf pdf_icon

AFN3310W

AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:514K  alfa-mos
 afn3316w.pdf pdf_icon

AFN3310W

AFN3316W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/6A,RDS(ON)=148m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:588K  alfa-mos
 afn3309ws.pdf pdf_icon

AFN3310W

AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.2. Size:596K  alfa-mos
 afn3306ws.pdf pdf_icon

AFN3310W

AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AFN3015S , AFN3016S , AFN3019S , AFN3025S , AFN3030 , AFN3302W , AFN3306WS , AFN3309WS , SPP20N60C3 , AFN3316W , AFN3400 , AFN3400A , AFN3400AS , AFN3400S , AFN3402 , AFN3402A , AFN3404 .

History: FQPF50N06L | SVS70R600FE3 | MXP6004CTS | IRF614SPBF | DH025N03 | IXFV18N90PS | HUFA76429D3ST

 

 
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