AFN3406 - параметры транзистора MOSFET, его аналоги, datasheet

AFN3406 Datasheet (PDF)

..1. Size:578K alfa-mos
afn3406.pdf pdf_icon

AFN3406 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

0.1. Size:710K alfa-mos
afn3406as.pdf pdf_icon

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

0.2. Size:710K alfa-mos
afn3406a.pdf pdf_icon

AFN3406A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

0.3. Size:578K alfa-mos
afn3406s.pdf pdf_icon

AFN3406S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

Другие MOSFET... AFN3316W , AFN3400 , AFN3400A , AFN3400AS , AFN3400S , AFN3402 , AFN3402A , AFN3404 , 4435 , AFN3406A , AFN3406AS , AFN3406S , AFN3410 , AFN3414 , AFN3414A , AFN3414S , AFN3416 .