Справочник MOSFET. AFN4900W

 

AFN4900W Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFN4900W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
   Тип корпуса: SOP-8P
     - подбор MOSFET транзистора по параметрам

 

AFN4900W Datasheet (PDF)

 ..1. Size:498K  alfa-mos
 afn4900w.pdf pdf_icon

AFN4900W

AFN4900W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4900W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=115m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=140m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:280K  alfa-mos
 afn4906.pdf pdf_icon

AFN4900W

AFN4906 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4906, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/5.6A,RDS(ON)=70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:576K  alfa-mos
 afn4924.pdf pdf_icon

AFN4900W

AFN4924 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 38m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:602K  alfa-mos
 afn4946w.pdf pdf_icon

AFN4900W

AFN4946W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=48m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STB85NF3LLT4 | IRC8405 | SSP90R1K5S | 7N65KG-T2Q-T | 2SK56 | SQJ460AEP | IRF6217

 

 
Back to Top

 


 
.